Possibilities for Thick, Simple-Structure Silicon X-Ray Detectors Operated by Peltier Cooling

Matsuura, Hideharu; Hullinger, D.; Okada, Ryota; Kitanoya, Seigo; Nishikawa, Shingo; Decker, Keith W.

doi:10.4028/www.scientific.net/kem.495.294

Cited by 4 publications

(21 citation statements)

References 5 publications

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“…To operate an X-ray detector with a thick Si substrate at a reasonable reverse bias, the n -Si substrate should have resistivity greater than 5 kΩ•cm, which corresponds to donor density less than 10 12 cm -3 , while the n -Si substrate in commercial SDDs has resistivity of approximately 2 kΩ•cm. In SDDs with high-resistivity Si substrates, however, large hole current flows between the cathode and some p rings, owing to the large difference in voltage between them [12,13]. Fig.…”

Section: Device Simulation Of Simply Struc-tured X-ray Detectormentioning

confidence: 99%

“…When the anode and the p ring were metallized, the seven ring-shaped gates were formed. The fabrication details have been reported elsewhere [12,13]. Fig.…”

Section: Fabricationmentioning

confidence: 99%

“…(1). SDDs with MOSFETs or implanted resistors are costly to manufacture, so we have designed several simple SDDs that are free of MOSFETs or implanted resistors [8][9][10][11][12][13].…”

Section: Introductionmentioning

confidence: 99%

“…This means that the cooling mechanism should also be compact and portable; these conditions are satisfied by a Peltier cooler. Against this background, we have been working to develop thick, simply structured Si Xray detectors operated by Peltier cooling [12,13].…”

Section: Introductionmentioning

confidence: 99%

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Simulation and Fabrication of Gated Silicon Drift X-Ray Detector Operated by Peltier Cooling

Matsuura¹,

Hullinger²,

Decker³

2013

TOEEJ

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A proposed simply structured gated silicon (Si) drift X-ray detector operated using Peltier cooling and only a single high-voltage source is investigated. Because the device structure is much simpler than that of commercial Si drift detectors (SDDs), which require at least two high-voltage sources, the cost of the X-ray detection system can be reduced. The absorption of cadmium X-ray fluorescence photons (energy: 23.1 keV) in 0.3-mm-thick Si is only 19% in commercial SDDs. Toward realizing detectors with thicker Si substrates, we simulate the electric potential distribution in the proposed detector with a Si substrate having thickness of 0.625 mm and resistivity of 10 kΩ·cm, and we perform fundamental experiments on a fabricated prototype. The simulation result is in good agreement with the experimental result that the effective active area of the detector is approximately 18 mm2 by using incident X-rays passed through a 0.1-mm-diameter pinhole. An energy resolution of 145 eV at 5.9 keV is experimentally obtained from an 55Fe source at -38 °C.

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Section: Device Simulation Of Simply Struc-tured X-ray Detectormentioning

confidence: 99%

“…When the anode and the p ring were metallized, the seven ring-shaped gates were formed. The fabrication details have been reported elsewhere [12,13]. Fig.…”

Section: Fabricationmentioning

confidence: 99%

“…(1). SDDs with MOSFETs or implanted resistors are costly to manufacture, so we have designed several simple SDDs that are free of MOSFETs or implanted resistors [8][9][10][11][12][13].…”

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Simulation and Fabrication of Gated Silicon Drift X-Ray Detector Operated by Peltier Cooling

Matsuura¹,

Hullinger²,

Decker³

2013

TOEEJ

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“…Thicker Si X-ray detectors have been investigated in order to detect X-ray fluorescence photons with energies up to 50 keV for X-ray absorbance higher than 15%. [38][39][40][41][42][43] The thicknesses and active areas of single-anode SDDs are up to 0.5 mm and 1.5 cm 2 , respectively. We previously reported prototype gated silicon drift detectors (GSDDs) that contained 0.625-mm-thick Si substrates with an effective active area of 0.18 cm 2 operated by Peltier cooling and a single voltage source.…”

Section: Introductionmentioning

confidence: 99%

Simulation of 1.5-mm-thick and 15-cm-diameter gated silicon drift X-ray detector operated with a single high-voltage source

Matsuura

2015

Jpn. J. Appl. Phys.

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High-resolution silicon X-ray detectors with a large active area are required for effectively detecting traces of hazardous elements in food and soil through the measurement of the energies and counts of X-ray fluorescence photons radially emitted from these elements. The thicknesses and areas of commercial silicon drift detectors (SDDs) are up to 0.5 mm and 1.5 cm 2 , respectively. We describe 1.5-mm-thick gated SDDs (GSDDs) that can detect photons with energies up to 50 keV. We simulated the electric potential distributions in GSDDs with a Si thickness of 1.5 mm and areas from 0.18 to 168 cm 2 at a single high reverse bias. The area of a GSDD could be enlarged simply by increasing all the gate widths by the same multiple, and the capacitance of the GSDD remained small and its X-ray count rate remained high.

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Gated Silicon Drift Detector Fabricated from a Low-Cost Silicon Wafer

Matsuura

Sakurai

Oda

et al. 2015

Sensors

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Inexpensive high-resolution silicon (Si) X-ray detectors are required for on-site surveys of traces of hazardous elements in food and soil by measuring the energies and counts of X-ray fluorescence photons radially emitted from these elements. Gated silicon drift detectors (GSDDs) are much cheaper to fabricate than commercial silicon drift detectors (SDDs). However, previous GSDDs were fabricated from 10-kΩ·cm Si wafers, which are more expensive than 2-kΩ·cm Si wafers used in commercial SDDs. To fabricate cheaper portable X-ray fluorescence instruments, we investigate GSDDs formed from 2-kΩ·cm Si wafers. The thicknesses of commercial SDDs are up to 0.5 mm, which can detect photons with energies up to 27 keV, whereas we describe GSDDs that can detect photons with energies of up to 35 keV. We simulate the electric potential distributions in GSDDs with Si thicknesses of 0.5 and 1 mm at a single high reverse bias. GSDDs with one gate pattern using any resistivity Si wafer can work well for changing the reverse bias that is inversely proportional to the resistivity of the Si wafer.

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Possibilities for Thick, Simple-Structure Silicon X-Ray Detectors Operated by Peltier Cooling

Cited by 4 publications

References 5 publications

Simulation and Fabrication of Gated Silicon Drift X-Ray Detector Operated by Peltier Cooling

Simulation and Fabrication of Gated Silicon Drift X-Ray Detector Operated by Peltier Cooling

Simulation of 1.5-mm-thick and 15-cm-diameter gated silicon drift X-ray detector operated with a single high-voltage source

Gated Silicon Drift Detector Fabricated from a Low-Cost Silicon Wafer

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