Possible detection of low energy solar neutrons using boron based materials

Benker, Nicole; Echeverría, Elena; Olesen, Robert; Kananen, Brant E.; McClory, John W.; Losovyj, Yaroslav; Адамів, В.Т.; Teslyuk, I.M.; Peterson, George; Bradley, Ben; Wilson, Ethiyal R.; Petrosky, James C.; Dong, Bin; Kelber, Jeffry A.; Hamblin, Jennifer; Doumani, Jacques; Dowben, Peter A.; Enders, Axel

doi:10.1016/j.radmeas.2019.106190

Cited by 3 publications

(3 citation statements)

References 42 publications

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“…The film with an indole/carborane ratio of 2.6:1 displays indirect and direct band gaps of 1.6 eV and 3.5 eV. The measured direct gap energies are in good agreement with the calculated HOMO-LUMO gaps obtained from cluster calculations, and with trends observed in other PECVD carborane/aromatic films [7].…”

Section: Discussionsupporting

confidence: 84%

“…The best fit optical model consists of the silicon substrate, the native oxide layer and a Cauchy layer representing the indole/orthocarborane layer. The average film thicknesses for the PECVD orthocarborane film, the indole/orthocarborane and PECVD indole-only films were 190 (7) nm, 212 (14) nm and 138 (4) nm respectively, where the numbers in parenthesis represent VASE-derived thickness non-uniformities [4].…”

Section: Methodsmentioning

confidence: 99%

“…Semiconducting boron carbide films alloyed with aromatics formed by plasma enhanced chemical vapor deposition (PECVD) of boron carbides from carborane sources (closo-1, 2-dicarbadodecaborane (orthocarborane) and closo-1, 7dicarbadodecaborane (metacarborane)) and aromatics (aniline [1][2][3], benzene [3,4] and pyridine [2,3,[5][6][7]) display a wide range of drift carrier lifetimes, indicating a dependence of the electronic properties on the choice of aromatic moiety in the alloy. Charge transport lifetimes in the region 10 -4 to 10 -3 sec have been observed for some aromatic/carborane PECVD films [3,4,7]. A few such plasma enhanced chemical vapor deposition (PECVD) hydrogenated boron carbides, alloyed with aromatic moieties, have been demonstrated to be excellent detectors for thermal neutrons [5,8].…”

Section: Introductionmentioning

confidence: 99%

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Optical, electronic and visible-range photo-electronic properties of boron carbide-indole films

Oyelade

Osonkie

Yost

et al. 2020

J. Phys. D: Appl. Phys.

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Semiconducting aromatic boron carbide films have been formed by plasma enhanced chemical vapor deposition (PECVD) from closo-1,2-dicarbadodecarborane (orthocarborane) and indole precursors. X-ray photoemission and ellipsometry indicate that the films consist of intact indole moieties bonded to the B sites on orthocarborane icosahedra. The ellipsometry measurements, of the PECVD hydrogenated boron carbide alloyed with indole moieties, indicate indirect and direct band gaps of 1.6 eV and 3.5 eV, respectively, in good agreement with density functional theory cluster calculations. These calculations also indicate that states near the valence band maximum and conduction band minimum are associated with indole and carborane moieties, respectively. The current versus voltage (I(V)) curves, of PECVD hydrogenated boron carbide alloyed with indole moieties to n-type silicon diodes, indicate a photocurrent at zero bias, with an appreciable open-circuit voltage of 1 V. The 4th quadrant conductivity and voltage, at the maximum power point, were 1.66 μA and 0.69 V respectively, under illumination. The frequency- and bias-dependent capacitance versus voltage (C(V)) data yield mean carrier lifetimes from 2.5 ms to 1.5 ms at low and high bias, respectively at 10 kHz, but falling to 0.5 ms, independent of bias voltage, at 100 kHz.

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Section: Discussionsupporting

confidence: 84%

Section: Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Optical, electronic and visible-range photo-electronic properties of boron carbide-indole films

Oyelade

Osonkie

Yost

et al. 2020

J. Phys. D: Appl. Phys.

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The cosmogenic production of phosphorus in the atmosphere of Venus

McTaggart

2022

Icarus

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Effect of gamma-irradiation on the photoluminescence of silver-doped lithium triborate glass

Adamiv,

Burak,

Volodko

et al. 2024

Appl. Opt.

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Optical-luminescence properties, including absorption spectra, photoluminescence excitation spectra, and changes in photoluminescence spectra after irradiation with γ-rays in the dose range of 1–3 Gy, were measured for novel LiB3O5:Ag dosimeter glass. A clear dependence of the intensity of the photoluminescence (PL), with a maximum of approximately 300 nm, on the dose value when excited by light with λexc=220nm was observed. The mechanism of PL in γ-irradiated LiB3O5:Ag glass is proposed to be a consequence of radiation annihilation with the emission of relaxed exciton-like electronic excitations with the participation of impurity defects (Ag0) in the glass structure. Considering that LiB3O5 has an effective atomic number of Zeff=7.39, which is the closest to Zeff=7.42 of human body tissue, LiB3O5:Ag glass can be very promising for γ-dosimetry in medical practice during radiation therapy of patients with cancer. The presence of lithium Li(6) and boron B(10) isotopes increases the sensitivity of LiB3O5:Ag glass to neutrons, which is promising for the manufacture of individual neutron dosimeters for applications in a new field of radiation therapy–neutron therapy.

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Possible detection of low energy solar neutrons using boron based materials

Cited by 3 publications

References 42 publications

Optical, electronic and visible-range photo-electronic properties of boron carbide-indole films

Optical, electronic and visible-range photo-electronic properties of boron carbide-indole films

The cosmogenic production of phosphorus in the atmosphere of Venus

Effect of gamma-irradiation on the photoluminescence of silver-doped lithium triborate glass

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