Possible new single-buffer layers for YBa2Cu3O7−y coated conductors prepared by chemical solution deposition

Guo, Li; Pu, M.H.; Zhou, Huaming; Du, X.H.; Zhang, Yanbing; Zhao, Yong

doi:10.1557/jmr.2007.0320

Cited by 16 publications

(12 citation statements)

References 18 publications

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“…Namely, it is reported from band structure calculations that YBiO 3 in the cubic perovskite structure with this 4.405Å lattice parameter and Bi at the octahedral site is about 2.50 eV/atom above the lowest-energy structure and therefore unlikely to be stable. [83] This value of 4.405Å is much smaller than the reported value of 5.428Å [82] lacking discussion on the actual crystal structure. This value of 5.428 is subsequently erroneously [84] assigned to a perovskite structure predicting YBiO 3 to be a topological insulator.…”

Section: Structural Characterisationmentioning

confidence: 67%

“…From theoretical and experimental results it is concluded that (Y x Bi 1−x ) 2 O 3 with x = 0.2-0.5 has a cubic lattice constant of ∼5.4Å, with a defective fluorite type crystal structure with space group Fm3m. [80][81][82]11 Therefore the observed peaks at 33.4 • and 28.8 • are assigned to respectively YBiO 3 (002) and YBiO 3 (111) reflections assuming this cubic fluorite structure, 12 which translate to an out-of-plane lattice constant of 5.360Å. 10 This is supported by XPS compositional characterisation discussed in the next section.…”

Section: Structural Characterisationmentioning

confidence: 72%

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Stoichiometry control in oxide thin films by pulsed laser deposition

Groenen

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Cover image: Reflection High Energy Electron Diffraction patterns of SrTiO 3 thin films on SrTiO 3 substrates grown with pulsed laser deposition at various partial oxygen background gas pressure conditions. The colorscale and the level of detail of the image are manipulated.The research described in this thesis was carried out within the Inorganic Materials Science group, Department of Science and Technology and the MESA+ Institute for Nanotechnology, University of Twente, P.O. Box 217, 7500 AE Enschede, The Netherlands. This research is supported by the Dutch Technology Foundation STW, which is part of the Netherlands Organization for Scientific Research (NWO) and partly funded by the Ministry of Economic Affairs (project number 10760). Chapter 1 Stoichiometry control in oxide thin films IntroductionIn 1959 Richard Feynman for the first time discussed the synthesis of materials via manipulation of single atoms in his famous talk 'There's Plenty of Room at the Bottom'. 1 Since then, the advances and achievements in the field of nanotechnology have lead to functionalised materials, devices and technology with increasingly smaller integrated circuits and denser data storage. The term nanotechnology itself was first used by Norio Taniguchi, professor of Tokyo University of Science in 1974, to describe processes such as thin film deposition exhibiting control on the order of a nanometer. [1] His definition of nanotechnology, Nano-technology mainly consists of the processing of separation, consolidation, and deformation of materials by one atom or one molecule, still stands today and romantically summarises the essence of materials science and engineering at nanoscale dimensions. Advances in fabrication processes and characterisation techniques have made it possible to synthesise, characterise and manipulate material at the atomic scale. At these dimensions, quantum effects dominate the properties of materials such that intrinsic material bulk properties are altered or lost and new phenomena and properties can emerge. This creates new pathways and possibilities for new applications. A good example is the giant magnetoresistance effect, widely applied in magnetic field sensors in hard disk drives and all sorts of sensors. A highly interesting class of materials are complex metal oxides, for their rich variety of interesting physical properties such as ferroelectricity, ferromagnetism and superconductivity. A widely investigated sub-group within the complex metal oxides are the perovskite metal oxides. The term 'perovskite' originates from the discovery of the calcium titanium oxide (CaTiO 3 ) mineral in 1839, but is nowadays used to describe the family of crystals with an ABO 3 stoichiometry. The unit cell of perovskites has rare-earth or metal A and B cations and six oxygen atoms, forming a BO 6 oxygen octahedra in the centre of the cubic with the A cation in its corners.The properties of (perovskite) complex metal oxides are highly sensitive to slight deviation from the ideal crystal stoichiometry. Therefore, a gen...

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Section: Structural Characterisationmentioning

confidence: 67%

Section: Structural Characterisationmentioning

confidence: 72%

Stoichiometry control in oxide thin films by pulsed laser deposition

Groenen

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“…In order to lower the sintering temperature of the buffer layer for coated conductors in CSD processing, a class of new buffer materials, REBiO 3 (RE correspond to a rare earth element), were developed, and their physical and chemical property were systematically characterized [11,12]. A REBiO 3 buffer layer can be epitaxially grown at a relatively low temperature of around 700-900 • C [12][13][14][15][16][17] because of its low formation temperature. Lowering the processing temperature not only means saving energy and reducing cost, but can also avoid or reduce some of the difficulties of manufacturing coated conductors, e.g., avoiding mechanical strength degradation at high temperatures for metal substrates and reducing chemical diffusion in the interface of the buffer layer and substrate.…”

Section: Introductionmentioning

confidence: 99%

“…In addition, once formed, the REBiO 3 buffer layer possesses very good thermal stability as studied via thermal decomposition experiments in different oxygen partial pressures for YBiO 3 (YBO) precursor powders [13]. Taking these advantages, YBO and SmBiO 3 (SBO) films have been successfully grown in air [14,15]. GdBiO 3 (GBO) and DyBiO 3 (DBO) films have also been successfully grown in argon gas [16,17].…”

Section: Introductionmentioning

confidence: 99%

The Effect of Sintering Oxygen Partial Pressure on a SmBiO3 Buffer Layer for Coated Conductors via Chemical Solution Deposition

Zhu

Zhao

et al. 2016

Coatings

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Abstract:The application of high-temperature YBa 2 Cu 3 O 7−δ (YBCO) superconducting material is a considerable prospect for the growing energy shortages. Here, SmBiO 3 (SBO) films were deposited on (100)-orientated yttrium-stabilized zirconia (YSZ) simple crystal substrates via the chemical solution deposition (CSD) approach for coated conductors, and the effects of sintering oxygen partial pressure on SBO films were studied. The crystalline structures and surface morphologies of SBO films were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), and atomic force microscope (AFM). The optimized growth temperature, the intensity ratios of the SBO (200) peak to the SBO (111) peak, and the crystallinities of SBO films increased with the sintering oxygen partial pressure. The SEM and AFM images displayed a smooth and well-distributed surface in the argon atmosphere. The subsequent YBCO films with superconducting transition temperatures (T c = 89.5 K, 90.2 K, and 86.2 K) and critical current densities (J c = 0.88 MA/cm 2 , 1.69 MA/cm 2 , and 0.09 MA/cm 2 ; 77 K, self-field) were deposited to further check the qualities of the SBO layer. These results indicated that sintering oxygen partial pressure had an effect on the epitaxial growth of the SBO buffer layer and YBCO superconducting properties. The experimental results may be a usable reference for the epitaxial growth of YBCO-coated conductors and other oxides.

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“…In an effort to obtain highly textured REBCO coated conductors, many buffer layer materials have been identified including SrTiO 3 [8], La 2 Zr 2 O 7 [9,10], CeO 2 [11,12], RE 2 O 3 [13][14][15] and REBiO 3 [16][17][18][19]. As a promising candidate of buffer layer material for YBCO coated conductors, CeO 2 has been prepared by many groups due to its excellent chemical compatibility with Ni-based alloy substrates as well as good lattice match with YBCO or REBCO.…”

Section: Introductionmentioning

confidence: 99%

Sm-doped CeO2 single buffer layer for YBCO coated conductors by polymer assisted chemical solution deposition (PACSD) method

Sun

et al. 2008

Journal of Alloys and Compounds

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Possible new single-buffer layers for YBa₂Cu₃O₇₋_y coated conductors prepared by chemical solution deposition

Cited by 16 publications

References 18 publications

Stoichiometry control in oxide thin films by pulsed laser deposition

Stoichiometry control in oxide thin films by pulsed laser deposition

The Effect of Sintering Oxygen Partial Pressure on a SmBiO3 Buffer Layer for Coated Conductors via Chemical Solution Deposition

Sm-doped CeO2 single buffer layer for YBCO coated conductors by polymer assisted chemical solution deposition (PACSD) method

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