Post-annealed gallium and aluminum co-doped zinc oxide films applied in organic photovoltaic devices

Chang, Sung‐Jin

doi:10.1186/1556-276x-9-562

Cited by 15 publications

(10 citation statements)

References 31 publications

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“…Thus, the composition of A3.0G1.0ZO was found to be optimal with respect to electrical properties, showing both the highest measured mobility and charge carrier density. Whilst the charge carrier density was lower than that reported elsewhere by up to four times, 38,39,43,44 this can in turn rationalize the exceptionally high carrier mobility (10 times higher than that reported by the best performing AGZO materials) [38][39][40][41][42][43][44] in part due to reduced scattering effects from other charge carriers.…”

Section: Electrical Characterizationmentioning

confidence: 90%

“…The co-doping approach has yielded films with resistivities in the literature of ca. 10 -4 Ω cm [38][39][40][41][42][43] and optical transparencies above 80 % [42][43][44] for thin films (deposited by magnetron sputtering). Whilst showing promise for TCO applications, AGZO has received relatively little attention in the literature compared to singularly doped AZO and GZO.…”

Section: Introductionmentioning

confidence: 99%

“…Co-doping of aluminum and gallium into zinc oxide (AGZO), offers a balance of cost and performance (chemical stability and conductivity) with respect to AZO and GZO. The codoping approach has yielded films with resistivities in the literature of ∼10 –4 Ω cm − and optical transparencies above 80% − for thin films (deposited by magnetron sputtering). While showing promise for TCO applications, AGZO has received relatively little attention in the literature compared to the singularly doped AZO and GZO.…”

Section: Introductionmentioning

confidence: 99%

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High-Throughput Continuous Hydrothermal Synthesis of Transparent Conducting Aluminum and Gallium Co-doped Zinc Oxides

et al. 2017

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High-throughput continuous hydrothermal flow synthesis was used to generate a library of aluminum and gallium-codoped zinc oxide nanoparticles of specific atomic ratios. Resistivities of the materials were determined by Hall Effect measurements on heat-treated pressed discs and the results collated into a conductivity-composition map. Optimal resistivities of ∼9 × 10 Ω cm were reproducibly achieved for several samples, for example, codoped ZnO with 2 at% Ga and 1 at% Al. The optimum sample on balance of performance and cost was deemed to be ZnO codoped with 3 at% Al and 1 at% Ga.

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Section: Electrical Characterizationmentioning

confidence: 90%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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High-Throughput Continuous Hydrothermal Synthesis of Transparent Conducting Aluminum and Gallium Co-doped Zinc Oxides

et al. 2017

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“…Post-annealing has been shown to improve the electrical and optical properties of as-deposited AZO/ITO films and reduce emissivity. In addition, our research team reported the effects of substrate temperature, vacuum annealing and hydrogen plasma annealing, respectively, on the structure and electrical and optical properties of GAZO films [28,30,31]. According to previous reports, the processing time of hydrogen plasma treatment can affect the structure of GAZO films and thus their physical properties [30,31].…”

Section: Introductionmentioning

confidence: 98%

Influence of Processing Time in Hydrogen Plasma to Prepare Gallium and Aluminum Codoped Zinc Oxide Films for Low-Emissivity Glass

Chang

Chan

et al. 2022

Coatings

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Low-emissivity glass has high transmission in the visible region and high reflectivity in the infrared region. Gallium and aluminum codoped zinc oxide (GAZO) processed by hydrogen (H2) plasma treatment holds promise for fabricating good low-emissivity glass. The applied processing time is one of the key factors in plasma treatment. The GAZO films were prepared by in-line sputtering at room temperature, and the effect of using different plasma processing times on the structural, electrical and optical properties of the films were surveyed. Experimental results indicate that H2 plasma treatment of GAZO film samples indeed influenced the structure, optical and electrical properties. An appropriate processing time can improve the electrical properties and reduce the emissivity of GAZO films. The optimum processing time is 5 min for plasma treatment of GAZO films. The electrical resistivity and emissivity of plasma-annealed films for 5 min decrease by 59% and 55% compared to those of as-deposited GAZO films. Values of 5.3 × 10−4 Ω-cm in electrical resistivity, 0.13 in emissivity and 94% in average optical transmittance in the visible wavelength region could be obtained for GAZO films after H2 treatment of 5 min in this work for low-emissivity glass applications.

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“…Aluminum (Al) and gallium (Ga) are n-type dopants that increase the concentration of free electrons, thereby improving the conductivity of ZnO films [7,8]. Al-doping of ZnO (AZO) had shown higher reactivity and optical transmittance than ZnO and is preferred dopant for the fabrication of transducer devices [8,9].…”

Section: Introductionmentioning

confidence: 99%

Mediator-free interaction of glucose oxidase, as model enzyme for immobilization, with Al-doped and undoped ZnO thin films laser-deposited on polycarbonate supports

V.T.K.P.

Inguva

Krishnamurthy

et al. 2017

Enzyme and Microbial Technology

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Research Highlights: Electrochemical interaction of ZnO and AZO thin films with the enzyme glucose oxidase was studied.  Nature of interaction of GOx with AZO was explored using XPS.  Mechanism of the electron transfer between GOx and AZO/ZnO was studied using EIS.  The results show that AZO is preferable to ZnO for GOx immobilization and glucose sensor development. Abstract:Al doped and undoped ZnO thin films were deposited by pulsed-laser deposition on polycarbonate sheets. The films were characterized by optical transmission, Hall effect measurement, XRD and SEM. Optical transmission and surface reflectometry studies showed good transparency with thicknesses ~100 nm and surface roughness of 10 nm. Hall effect measurements showed that the sheet carrier concentration was -1.44 x 10 15 cm -2 for AZO and -6 x 10 14 cm -2 for ZnO. The films were then modified by drop-casting glucose oxidase (GOx) without the use of any mediators. Higher protein concentration was observed on ZnO as compared to AZO with higher specific activity for ZnO (0.042 U mg -1 ) compared to AZO (0.032 U mg -1 ), and was in agreement with cyclic voltemmetry (CV). X-ray photoelectron spectroscopy (XPS) suggested that the protein was bound by dipole interactions between AZO lattice oxygen and the amino group of the enzyme. Chronoamperometry showed sensitivity of 5.5 µA mM -1 cm -2 towards glucose for GOx/AZO and 2.2 µA mM -1 cm -2 for GOx/ZnO. The limit of detection (LoD) was 167 µM of glucose for GOx/AZO, as compared to 360 µM for GOx/ZnO. The linearity was 0.28-28 mM for GOx/AZO whereas it was 0.6-28 mM for GOx/ZnO with a response time of 10s. Possibly due to higher enzyme loading, the decrease of impedance in presence of glucose was larger for GOx/ZnO as compared to GOx/AZO in electrochemical impedance spectroscopy (EIS). Analyses with clinical blood serum samples showed that the systems had good reproducibility and accuracy. The characteristics of novel ZnO and AZO thin films with GOx as a model enzyme, should prove useful for the future fabrication of inexpensive, highly sensitive, disposable electrochemical biosensors for high throughput diagnostics.

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Post-annealed gallium and aluminum co-doped zinc oxide films applied in organic photovoltaic devices

Cited by 15 publications

References 31 publications

High-Throughput Continuous Hydrothermal Synthesis of Transparent Conducting Aluminum and Gallium Co-doped Zinc Oxides

High-Throughput Continuous Hydrothermal Synthesis of Transparent Conducting Aluminum and Gallium Co-doped Zinc Oxides

Influence of Processing Time in Hydrogen Plasma to Prepare Gallium and Aluminum Codoped Zinc Oxide Films for Low-Emissivity Glass

Mediator-free interaction of glucose oxidase, as model enzyme for immobilization, with Al-doped and undoped ZnO thin films laser-deposited on polycarbonate supports

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