Post annealing effect on ultra-thin Hf-based high-k gate oxides on Si

Kim, Do Kyung; Ignatova, V. A.; Kücher, Peter; Weisheit, Martin; Zschech, Ehrenfried

doi:10.1016/j.cap.2008.12.040

Cited by 11 publications

(1 citation statement)

References 11 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The subsequent rapid thermal annealing caused E g of (ZrO 2 ) x (SiO 2 ) 1Àx films to be reduced when the ZrO 2 :SiO 2 ratio was larger than 1:7 while ZrO 2 :SiO 2 = 1:7 and pure ZrO 2 did not show any change in E g after RTP. A similar reduction of band-gap after annealing was observed for other high-k films as well [14]. Fig.…”

Section: Resultssupporting

confidence: 79%

Physical and electrical characteristics of band-engineered Zr-silicate/SiO2 stacks for tunnel barrier

Kang

Heo

Sohn

2010

Current Applied Physics

View full text Add to dashboard Cite

Section: Resultssupporting

confidence: 79%

Physical and electrical characteristics of band-engineered Zr-silicate/SiO2 stacks for tunnel barrier

Kang

Heo

Sohn

2010

Current Applied Physics

View full text Add to dashboard Cite

Electrical characteristics of atomic layer deposited Au/Ti/HfO2/n-GaAs MIS diodes in the wide temperature range

Türüt

Yıldız

Karabulut

et al. 2020

J Mater Sci: Mater Electron

View full text Add to dashboard Cite

Effect of atomic-layer-deposited HfO2 thin-film interfacial layer on the electrical properties of Au/Ti/n-GaAs Schottky diode

Yıldız

Karabulut

Orak

et al. 2021

J Mater Sci: Mater Electron

View full text Add to dashboard Cite

The electrical properties of Au/Ti/HfO2/n-GaAs metal/insulating layer/semiconductor (MIS) contact structures were analyzed in detail by the help of capacitance-voltage (C-V) and conductancevoltage (G-V) measurements in the temperature range of 60-320 K. The HfO2 thin film layer was obtained by atomic layer deposition technique (ALD). The main electrical parameters such as ideality factor (n) and barrier height (B0) were determined for Au/Ti/n-GaAs and Au/Ti/HfO2/n-GaAs diodes using current-voltage (I-V) measurement at 300 K. The values of these parameters are 1.07 and 0.77 eV for the reference (Au/Ti/n-GaAs) diode, and 1.30 and 0.94 eV for the Au/Ti/HfO2/n-GaAs MIS diode, respectively. An interfacial charge density value of = 4.14x10 12 Ccm -2 for the MIS diode was calculated from the barrier height difference of ∆Φ = 0.94 − 0.77 = 0.17 V. Depending on these results, the temperature dependent C-V and G-V plots of the device were also investigated. The series resistance (Rs), phase angle, the interface state density (Dit), the real impedance ( ′ ) and imaginary impedance ( ′′ ) were evaluated using admittance measurements. The C and G values increased, whereas ′′ and Z decreased with increasing voltage at each temperature. An intersection point being independent of temperature in the G-V curves appeared at forward bias side (1.4 V), after this intersection point of the G-V plot, the G values decreased with increasing temperature at a given voltage. The intersection points in total versus V curves appeared at forward bias side (1.7 V). The Nyquist spectra was recorded for the MIS structure showing single semicircular arcs with different diameters depending on temperature.

show abstract

Post annealing effect on ultra-thin Hf-based high-k gate oxides on Si

Cited by 11 publications

References 11 publications

Physical and electrical characteristics of band-engineered Zr-silicate/SiO2 stacks for tunnel barrier

Physical and electrical characteristics of band-engineered Zr-silicate/SiO2 stacks for tunnel barrier

Electrical characteristics of atomic layer deposited Au/Ti/HfO2/n-GaAs MIS diodes in the wide temperature range

Effect of atomic-layer-deposited HfO2 thin-film interfacial layer on the electrical properties of Au/Ti/n-GaAs Schottky diode

Contact Info

Product

Resources

About