Post-annealing effects on RF sputtered all-amorphous ZnO/SiC heterostructure for solar-blind highly-detective and ultralow dark-noise UV photodetector

Controlling the electrical resistivity of porous silicon carbide ceramics and their applications: A review

“…Apart from PDCs processed samples, the presence of amorphous phase among SiC particles has also been reported in pressureless, hot‐pressed, and spark plasma sintered samples 34 ,, 36,53,55 . The presence of amorphous phase in the microstructure results in an increase of the electrical resistivity as charge carriers cannot pass through this disordered structure 53,55,66,111 …”

“…The electrical resistivity improved from 5.0 × 10 5 to 1.0 × 10 2 Ω.cm with an increase of the annealing temperature from 1100 to 1600 • C. 111 This improvement of the electrical conductivity is attributed to the transformation of amorphous SiC to crystalline state. Ferhati et al 66 reported a decrease of the electrical resistivity (from 6.15 × 10 5 to 4.87 × 10 5 Ω.cm) in ZnO/SiC interface with the application of annealing process at 500 • C which was attributed to the decrease of defects and increase of interface crystallinity. Kultayeva et al 25 used 20 wt.% polycarbosilane (PCS) as a bonding phase among α-SiC particles and reported the in-situ formation of β-SiC during the sintering at 1300 • C under Ar and N 2 .…”

“…Amorphous SiC is mostly obtained in case of polymer derived ceramics (PDCs) processing route which causes the electrical resistivity to increase due to its disordered structure. 64,65 The electrical conductivity of amorphous SiC can be improved via high temperature heat treatment 66,67 or by the addition of secondary conductive phases. 65,68 Second-phase additives (oxides, elements, nitrides/carbides, etc.)…”

“…34"36,53,55 The presence of amorphous phase in the microstructure results in an increase of the electrical resistivity as charge carriers cannot pass through this disordered structure. 53,55,66,111 Although, the presence of amorphous SiC increases the electrical resistivity but it is possible to improve the conductivity of the prepared samples via high temperature heat treatment. 66,67,[116][117][118] For example, Li et al 111 studied the effect of annealing temperature on the electrical resistivity of polymer-derived porous SiC (40-50% porosity) pyrolyzed at 900 • C and reported that the electrical resistivity decreased with an increase in the annealing temperature.…”

“…53,55,66,111 Although, the presence of amorphous SiC increases the electrical resistivity but it is possible to improve the conductivity of the prepared samples via high temperature heat treatment. 66,67,[116][117][118] For example, Li et al 111 studied the effect of annealing temperature on the electrical resistivity of polymer-derived porous SiC (40-50% porosity) pyrolyzed at 900 • C and reported that the electrical resistivity decreased with an increase in the annealing temperature. The electrical resistivity improved from 5.0 × 10 5 to 1.0 × 10 2 Ω.cm with an increase of the annealing temperature from 1100 to 1600 • C. 111 This improvement of the electrical conductivity is attributed to the transformation of amorphous SiC to crystalline state.…”