Post growth annealing study on long wavelength infrared InAs/GaSb superlattices

Haugan, H. J.; Brown, Gail J.; Elhamri, S.; Pacley, Shanee; Olson, B. V.; Boggess, Thomas F.

doi:10.1063/1.3693535

Cited by 22 publications

(11 citation statements)

References 12 publications

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“…In previous studies, based on a variety of techniques, the MC lifetime has consistently been measured to be 75-100 ns for midwavelength IR (MWIR) and 15-30 ns for long-wavelength IR (LWIR) InAs/Ga(In)Sb type-2 superlattices (T2SLs). [3][4][5][6][7] Garelated Shockley-Read-Hall (SRH) recombination centers are suggested to be the cause of these short lifetimes. [8][9][10] The recent observations of much longer MC lifetimes in Ga-free InAs/InAsSb T2SLs provide strong support for this suggestion.…”

Section: Introductionmentioning

confidence: 99%

Temperature-dependent optical measurements of the dominant recombination mechanisms in InAs/InAsSb type-2 superlattices

Aytac

Olson

Kim

et al. 2015

Journal of Applied Physics

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Temperature-dependent measurements of carrier recombination rates using a time-resolved optical pump-probe technique are reported for mid-wave infrared InAs/InAs 1Àx Sb x type-2 superlattices (T2SLs). By engineering the layer widths and alloy compositions, a 16 K band-gap of $235 6 10 meV was achieved for five unintentionally and four intentionally doped T2SLs. Carrier lifetimes were determined by fitting lifetime models based on Shockley-Read-Hall (SRH), radiative, and Auger recombination processes to the temperature and excess carrier density dependent data. The minority carrier (MC), radiative, and Auger lifetimes were observed to generally increase with increasing antimony content and decreasing layer thickness for the unintentionally doped T2SLs. The MC lifetime is limited by SRH processes at temperatures below 200 K in the unintentionally doped T2SLs. The extracted SRH defect energy levels were found to be near mid-bandgap. Also, it is observed that the MC lifetime is limited by Auger recombination in the intentionally doped T2SLs with doping levels greater than n $ 10 16 cm À3. V

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Section: Introductionmentioning

confidence: 99%

Temperature-dependent optical measurements of the dominant recombination mechanisms in InAs/InAsSb type-2 superlattices

Aytac

Olson

Kim

et al. 2015

Journal of Applied Physics

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“…6,8 Using a variety of techniques, the minority carrier lifetime has consistently been measured to be 75-100 ns for MWIR and 15-30 ns for LWIR InAs/Ga(In)Sb T2SLs. [8][9][10][11] GaSb-related ShockleyRead-Hall (SRH) recombination centers are suspected to be the cause of these short lifetimes. 12,13 The improved minority carrier lifetimes of 9 ls in MWIR 14 and >412 ns in LWIR 15 T2SLs that were observed in the "Ga-free" InAs/ InAs 1-x Sb x material system have provided a potentially superior alternative to InAs/Ga(In)Sb.…”

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confidence: 99%

Effects of layer thickness and alloy composition on carrier lifetimes in mid-wave infrared InAs/InAsSb superlattices

Aytac

Olson

Kim

et al. 2014

Applied Physics Letters

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Measurements of carrier recombination rates using a time-resolved pump-probe technique are reported for mid-wave infrared InAs/InAs1−xSbx type-2 superlattices (T2SLs). By engineering the layer widths and alloy compositions, a 16 K band-gap of ≃235 ± 10 meV was achieved for all five unintentionally doped T2SLs. Carrier lifetimes were determined by fitting a rate equation model to the density dependent data. Minority carrier lifetimes as long as 10 μs were measured. On the other hand, the Auger rates for all the InAs/InAsSb T2SLs were significantly larger than those previously measured for InAs/GaSb T2SLs. The minority carrier and Auger lifetimes were observed to generally increase with increasing antimony content and decreasing layer thickness.

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“…Previous reports identify that SRH recombination is the mechanism limiting the MC lifetimes in both MWIR and LWIR unintentionally doped InAs=InðAs; SbÞ T2SLs and In(As,Sb) alloys at temperatures relevant to photodetector operation [2,5,9,10,[19][20][21][22]. The carrier lifetime associated with low-injection-level SRH recombination for a singledefect level is expressed as [19,20,23]…”

Section: Discussionmentioning

confidence: 99%

Evidence of a Shockley-Read-Hall Defect State Independent of Band-Edge Energy inInAs/In(As,Sb)Type-II Superlattices

et al. 2016

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A set of seven InAs=InðAs; SbÞ type-II superlattices (T2SLs) are designed to have specific band-gap energies between 290 meV (4.3 μm) and 135 meV (9.2 μm) in order to study the effects of the T2SL bandgap energy on the minority-carrier lifetime. A temperature-dependent optical pump-probe technique is used to measure the carrier lifetimes, and the effect of a midgap defect level on the carrier-recombination dynamics is reported. The Shockley-Read-Hall (SRH) defect state is found to be at energy of approximately −250 AE 12 meV relative to the valence-band edge of bulk GaSb for the entire set of T2SL structures, even though the T2SL valence-band edge shifts by 155 meV on the same scale. These results indicate that the SRH defect state in InAs=InðAs; SbÞ T2SLs is singular and is nearly independent of the exact position of the T2SL band-gap or band-edge energies. They also suggest the possibility of engineering the T2SL structure such that the SRH state is removed completely from the band gap, a result that should significantly increase the minority-carrier lifetime.

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Post growth annealing study on long wavelength infrared InAs/GaSb superlattices

Cited by 22 publications

References 12 publications

Temperature-dependent optical measurements of the dominant recombination mechanisms in InAs/InAsSb type-2 superlattices

Temperature-dependent optical measurements of the dominant recombination mechanisms in InAs/InAsSb type-2 superlattices

Effects of layer thickness and alloy composition on carrier lifetimes in mid-wave infrared InAs/InAsSb superlattices

Evidence of a Shockley-Read-Hall Defect State Independent of Band-Edge Energy inInAs/In(As,Sb)Type-II Superlattices

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