Post-Growth Fabrication of Multiple Wavelength DFB Laser Arrays With Precise Wavelength Spacing

Zanola, M.; Strain, Michael J.; Giuliani, G.; Sorel, Marc

doi:10.1109/lpt.2012.2195164

Cited by 21 publications

(11 citation statements)

References 12 publications

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“…More detailed description of the epitaxial structure can be found in [7]. The structure has been assessed in great detail over the last few years and showed excellent performance when used for fabricating semiconductor ring lasers (SRLs) [8], distributed feedback (DFB) [9] lasers and narrow linewidth semiconductor MMLs. However, the epitaxial structure was not designed with MLL operation in mind.…”

Section: Device Designmentioning

confidence: 99%

High-Power and Low-Noise Mode-Locking Operation of Al-Quaternary Laser Diodes

Stolarz

Pusino

Akbar

et al. 2015

IEEE J. Select. Topics Quantum Electron.

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REPLACE THIS LINE WITH YOUR PAPER IDENTIFICATION NUMBER (DOUBLE-CLICK HERE TO EDIT) < 1Abstract-We report on the design and experimental evaluation of AlGaInAs/InP multi-quantum-well epi-structures for modelocked emission at 1.5-μm. We show that mode-locked lasers fabricated on an optimized 3 quantum-well active region with a low optical confinement factor deliver pulses with increased peak power and stability over a much wider biasing range than those fabricated using a standard 5 quantum well design. Sonogram measurements indicate that sub-ps symmetrical pulses with a substantially reduced linear blue chirp are generated up to nearly three times the laser current threshold.

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Section: Device Designmentioning

confidence: 99%

High-Power and Low-Noise Mode-Locking Operation of Al-Quaternary Laser Diodes

Stolarz

Pusino

Akbar

et al. 2015

IEEE J. Select. Topics Quantum Electron.

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“…The output waveguides were tilted at 10 • and up-tapered in order to avoid back-reflections from the cleaved facets. In order to employ the postgrowth fabrication process already described in [20], gratings were obtained by a lateral etch of the waveguides (see Fig. 3).…”

Section: Device Design and Fabricationmentioning

confidence: 99%

“…10(a). In order to access this continuous tuning range, the three DFBs must be precisely spaced in frequency by fabrication [20]; otherwise, differences in injection currents required to set the laser wavelengths will result in large power output discrepancies and therefore prevent locking. Fig.…”

Section: B Three Dfb Lockingmentioning

confidence: 99%

Monolithically Integrated DFB Lasers for Tunable and Narrow Linewidth Millimeter-Wave Generation

Zanola

Strain

Giuliani

et al. 2013

IEEE J. Select. Topics Quantum Electron.

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A monolithic optoelectronic device for the generation of tunable and narrow linewidth millimeter-wave signals is presented. The device consists of three mutually injected distributed feedback lasers whose emission frequencies are stabilized via a four-wave mixing process. Their beating on a high-speed photodetector generates a narrow linewidth electrical signal that is continuously tunable over several tens of gigahertz.

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“…the laser pair DFB 1,3 produce a FWM product equal in frequency to DFB 2 , thus locking their phases and stabilising the optical beating signal. Furthermore, by simply tuning the frequency spacing of DFB 1 and DFB 2 , ensuring that DFB 3 tracks their centre point, the generated beating signal can be continuously tuned over a wide frequency range.This scheme was fabricated on a multi-quantum well AlGaInAs\InP material system and the DFB lasers were defined using upper-cladding sidewall modulation gratings in order to generate precise spacing of the three laser wavelengths [3]. Tuning of the laser wavelengths was achieved by direct current injection variation, with integrated SOA sections ensuring the optimal injection amplitude range was maintained.…”

mentioning

confidence: 99%

“…This scheme was fabricated on a multi-quantum well AlGaInAs\InP material system and the DFB lasers were defined using upper-cladding sidewall modulation gratings in order to generate precise spacing of the three laser wavelengths [3]. Tuning of the laser wavelengths was achieved by direct current injection variation, with integrated SOA sections ensuring the optimal injection amplitude range was maintained.…”

mentioning

confidence: 99%

Continuously tunable, narrow linewidth mm-wave generation from a monolithically integrated triple DFB laser chip

Zanola

Strain

Sorel

et al. 2013

2013 Conference on Lasers &Amp; Electro-Optics Europe &Amp; International Quantum Electronics Conference CLEO EUROPE/IQEC

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Generation of stable and tunable mm-wave and THz signals is extremely attractive for applications including tomography, gas sensing and imaging for security systems. Currently photonic methods for generating signals at these frequencies show either very limited tunability, as in the case of passively mode-locked lasers and THz quantum cascade lasers [1], or poor spectral purity, evinced in the photomixing of two uncorrelated laser sources [2]. In addition, current systems using the combination of a number of discrete optical elements require the use of bulky alignment optics increasing packaging costs and sensitivity to environmental noise sources.In this work a relatively simple arrangement of three DFB laser sources on a single chip is proposed and demonstrated, a schematic of the scheme is shown in Fig. 1(a). Two lasers DFB 1 and DFB 2 inject into DFB 3 whose free running frequency is designed to emit between those of DFB 1,2 . The result is that Four Wave Mixing (FWM) products of the pairs of lasers DFB 1,3 and DFB 2,3 are produced within DFB 3 . These FWM signals then produce feedback signals that coincide in frequency with the complimentary laser source, i.e. the laser pair DFB 1,3 produce a FWM product equal in frequency to DFB 2 , thus locking their phases and stabilising the optical beating signal. Furthermore, by simply tuning the frequency spacing of DFB 1 and DFB 2 , ensuring that DFB 3 tracks their centre point, the generated beating signal can be continuously tuned over a wide frequency range.This scheme was fabricated on a multi-quantum well AlGaInAs\InP material system and the DFB lasers were defined using upper-cladding sidewall modulation gratings in order to generate precise spacing of the three laser wavelengths [3]. Tuning of the laser wavelengths was achieved by direct current injection variation, with integrated SOA sections ensuring the optimal injection amplitude range was maintained. Measurements of the RF signal generated by the beating signal from the output at DFB 3 show a linewidth reduction of an order of magnitude (to 2.5MHz) when the system is in the phase locked condition. Locking range measurements show a tolerance of ~2GHz on the position of the wavelength of DFB 3. Furthermore, the locked frequency can be tuned continuously from a few GHz to 40GHz (the maximum measureable frequency of our RF spectrum analyser) as shown in Fig.1 (b). Fig. 1 (a) Schematic of a monolithically integrated 3 DFB system for FWM stabilised mm-wave generation.(b) Measured RF frequency tones from the tunable integrated DFB system across a 40GHz band.

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Post-Growth Fabrication of Multiple Wavelength DFB Laser Arrays With Precise Wavelength Spacing

Cited by 21 publications

References 12 publications

High-Power and Low-Noise Mode-Locking Operation of Al-Quaternary Laser Diodes

High-Power and Low-Noise Mode-Locking Operation of Al-Quaternary Laser Diodes

Monolithically Integrated DFB Lasers for Tunable and Narrow Linewidth Millimeter-Wave Generation

Continuously tunable, narrow linewidth mm-wave generation from a monolithically integrated triple DFB laser chip

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