Post hydrogenation effect by hot wire method on poly-crystalline silicon based devices

Shimizu, Ken D.; Kohama, Noriyoshi; Tani, Tadaaki; Hanna, Jun‐ichi

doi:10.1016/j.jnoncrysol.2004.03.007

Cited by 6 publications

(3 citation statements)

References 13 publications

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“…In both cases, excess hydrogenation decreased µ 0 . The increase in defect density over a long hydrogenation time was also reported for CVD poly-Si [26].…”

Section: Hydrogenation Effects On Electron Mobilitysupporting

confidence: 68%

Hydrogenation of Polycrystalline Silicon Thin‐Film Transistors

Hara¹,

Kitahara²

2017

New Advances in Hydrogenation Processes - Fundamentals and Applications

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In this chapter, the behavior of hydrogen (H) atoms in polycrystalline silicon (poly-Si) thin film is investigated in detail in order to evaluate and improve the quality of hydrogenated poly-Si thin films. Hydrogenation drastically improves the Hall effect mobility, whereas excessive hydrogenation tends to degrade it. The catalytic method is useful to inhibit excessive hydrogenation and damage suffered by the electric-field acceleration of charged particle. The H-termination of the dangling bonds at grain boundaries can be observed indirectly or directly by chemical etching and Raman microscopy. This H-termination appeared as the 2000 cm-1 local vibrational mode (LVM) in Raman spectra. The breaking of the Si-Si bonds by hydrogenation was detected as the 2100 cm-1 LVM. In addition, the defects generated in the plasma process exhibit multiple fine LVMs after hydrogenation. Moreover, we investigated the hydrogenation of low-temperature (LT) poly-Si thin-film transistors (TFTs) from the perspective of the gettering phenomenon. The most important parameter for effective hydrogenation using H gas annealing is the rate of cooling from 400°C.

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“…In both cases, excess hydrogenation decreased µ 0 . The increase in defect density over a long hydrogenation time was also reported for CVD poly-Si [26].…”

Section: Hydrogenation Effects On Electron Mobilitysupporting

confidence: 68%

Hydrogenation of Polycrystalline Silicon Thin‐Film Transistors

Hara¹,

Kitahara²

2017

New Advances in Hydrogenation Processes - Fundamentals and Applications

View full text Add to dashboard Cite

show abstract

“…In contrast to the dissociation of H2 by collisions with energetic electrons in PECVD, H2 is efficiently decomposed into atomic H by catalytic cracking reaction with the heated filament in HWCVD [9]. Coincidentally, a calculated diffusion coefficient for hot-wire atomic hydrogen agrees well with the value for diffusion from hydrogen plasma [10], which implies the highly-reactive nature of hot-wire atomic H. These H atoms can penetrate into the as-deposited poly-Si1-xGex films and terminate the unsaturated dangling bonds, with an effective post-hydrogenation depth up to ~250 nm [11]. Regarding this, the ultrathin (5-10 nm) intrinsic a-Si:H film for SHJ device must be susceptible to the exposure to hot-wire atomic hydrogen.…”

Section: Introductionsupporting

confidence: 57%

Improved amorphous/crystalline silicon interface passivation for silicon heterojunction solar cells by hot-wire atomic hydrogen during doped a-Si:H deposition

Zhang

Chen

et al. 2019

Applied Surface Science

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Intrinsic/doped stacked hydrogenated amorphous silicon (a-Si:H) are widely used passivation layers for amorphous/crystalline silicon (a-Si/c-Si) heterojunction solar cells. This work reports that hot wire chemical vapor deposition of doped a-Si:H can significantly modify the property of the underlying intrinsic a-Si:H (a-Si:H(i)) as well as a-Si/c-Si interface passivation, which stems from the in-diffusion of highly reactive atomic hydrogen. Fourier transform infrared spectroscopy, spectroscopic ellipsometry and Raman analyses indicate that the underlying a-Si:H(i) films become more compact and less defected as a result of network reconstruction during doped a-Si:H capping. After this reconstruction, underdense a-Si:H(i) films obtained superior passivation quality than widely used dense layers, despite the inferior quality in the initial state. Effective minority carrier lifetime of c-Si passivated by underdense a-Si:H(i) was 19.9 ms, much higher than 15.2 ms in the case of using dense a-Si:H(i). The porous structure of underdense a-Si:H(i) facilitates hydrogen diffusion towards a-Si/c-Si interface and hence a rapid reduction of interface defect densities occurs, accounting for the better passivation quality. SHJ solar cells (160 μm, 156 × 156 mm 2) with industry-compatible process were fabricated, yielding the efficiency up to 23.0% with high Voc values of 741mV.

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“…6) Consequently, research on forming polycrystalline semiconductor layers on the gate oxide films of BG-TFTs has been attempted for many years. Methods for forming polycrystalline Si (poly-Si) films have been studied, such as, lowpressure chemical vapor deposition (CVD), 7,8) plasma-enhanced CVD (PECVD), [9][10][11][12] and reactive thermal CVD, 13,14) where crystalline-Si is directly deposited on an insulator. However, these methods are prone to problems such as the difficulty of suppression of the amorphous incubation layer during the initial stage of growth just above the insulating layer and no increase in mobility because the amorphous layer becomes the channel of the BG-TFT.…”

Section: Introductionmentioning

confidence: 99%

Growth of high-crystallinity silicon films by a combination of intermittent pulse heating and plasma-enhanced chemical vapor deposition

Nojima

Hanafusa

Sato

et al. 2022

Jpn. J. Appl. Phys.

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We have developed a process to grow high-crystallinity silicon films on insulators by intermittent pulse heating (IPH)-assisted plasma-enhanced chemical vapor deposition to address a drawback of incubation layer formation at the early stage of growth. By applying electrical pulses (22 V, 5 Hz, 10% duty ratio) to a Mo strip underneath a SiO2 layer, the surface is instantaneously heated to 1050 K while maintaining a steady substrate temperature of 670 K. The growth mechanism similar to that of solid-phase epitaxy enhanced its growth rate up to 1.2 nm/s, which is five times greater than that of a-Si grown outside the Mo strip. The grown films assisted with IPH also showed 97% crystalline volume fraction with no incubation layer.

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Post hydrogenation effect by hot wire method on poly-crystalline silicon based devices

Cited by 6 publications

References 13 publications

Hydrogenation of Polycrystalline Silicon Thin‐Film Transistors

Hydrogenation of Polycrystalline Silicon Thin‐Film Transistors

Improved amorphous/crystalline silicon interface passivation for silicon heterojunction solar cells by hot-wire atomic hydrogen during doped a-Si:H deposition

Growth of high-crystallinity silicon films by a combination of intermittent pulse heating and plasma-enhanced chemical vapor deposition

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