Postdeposition annealing on RF-sputtered SrTiO3 thin films

Abstract

Experimental and numerical investigations on time-resolved characteristics of pulsed inductively coupled O 2 /Ar plasmas

Evidence of Enhanced Oxygen Vacancy Defects Inducing Ferromagnetism in Multiferroic CaMn7O12 Manganite with Sintering Time

“…The obtained band gaps E g from these plots are 1.68 and 1.38, respectively, with increasing sintering time from 12 to 15 h. This decrease (narrowing) of band gap between the valence band and conduction band (red shift) with sintering time is attributed to increased concentration of surface oxygen vacancies. Thus, in this way we can conclude that with the increase of annealing time the content of surface oxygen vacancies increases, and that of the band gap can efficiently reduce with the introduction of oxygen vacancy between the valence band and the conduction band Figure shows the change in band gap value and corresponding resultant schematic band structure.…”

“…The metal or oxygen defects at the grain boundary favor the merging process at a higher temperature by stimulating the coalescences of more and more grains during sintering. 36 Further average particle size (APS) distribution is depicted from AFM images and fitted with a Gaussian function. The results shown in Figure 5c and f represent the histogram plot for the particle size distribution of 12 and 15 h sintered CMO, respectively.…”

Growth and characterization of nanocrystalline SrTiOxfilms: room temperature deposition using RF sputtering system in a pure argon environment

“…Furthermore, in the VIS range, the refractive indices of nanocrystalline STO films are found to be 2.36 and 2.31 (@550 nm) for as-deposited and annealed films, respectively. Its value decreased with annealing, however, the observed values is larger than the reported amorphous (1.83-2.06) and polycrystalline (2.05-2.12) films [28,[32][33][34]. It should be noted that the film thickness which is generally lower than 100 nm has affects film properties, however, according to our best knowledge there is no comparative information on the effect of film thickness on thin STO films.…”

Electro‐optical performances of nanostructured SrTiOx films: The effect of plasma power, Ar/O2 ratio and annealing

“…However, in our study, we were not able to observe a considerable difference between crystallinity of 75 and 100 W samples, which indicates that aforementioned power effect is not pronounced for our RT deposited STO films. To improve the film crystallinity, RT deposition was followed by a high‐temperature (700°C, 1 h) annealing process 32 …”

“…To improve the film crystallinity, RT deposition was followed by a high-temperature (700°C, 1 h) annealing process. 32 Survey and high-resolution XPS scans of as-deposited and annealed STO films were recorded as a function of rf plasma power and OMR. The data revealed the presence of Sr, Ti, O, and Ar elements in the films.…”