Postexposure bake characteristics of a chemically amplified deep-ultraviolet resist

Sturtevant, John L.; Holmes, Steven J.; Rabidoux, Paul A.

doi:10.1117/12.59753

Cited by 10 publications

(1 citation statement)

References 7 publications

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“…Diffraction based techniques now exist for alignment [3], overlay [4], temperature measurement [5], latent image focus [6,7] and exposure [8] measurement, post exposure bake monitoring [9] and numerous dimensional parameter control applications [10, 1 1]. These applications exploit the sensitivity of the diffraction pattern to changes in the value ofthe parameter being measured.…”

Section: Introductionmentioning

confidence: 99%

Grating parameter estimation using scatterometry

et al. 1993

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The trend towards smaller design geometries for microelectronics devices places unprecedented demands on the measurement of these small structures. Scatterometry is a promising new optical metrology method for nondestructive rapid evaluation of many physical quantities of critical interest in microelectronics fabrication. The analysis of scatter data is carried out with the help ofRigorous Coupled Wave Theory (RCWT) which is used to determine the intensity oflight in each diffracted order based on arigorous application ofMaxwell's equations and relevantboundary conditions. Scatterometer data mustbe relatedback to the diffracting structure, the so-called "inverse-problem", and a novel technique for the solution of this problem is presented.Two sample problems are considered. In the first case we predict the shape ofdeveloped photoresistgratings from diffraction dataobtained from an angle scanning scatterometerin which a detector tracks aparticulardiffraction orderas theangle of incidence is varied. A database oftheoreticalscattered field envelopes is createdby solving forthe diffractedfields using RCWT foreach angle of incidence and each set of parameters in the parameter space. Multivariate statistical analysis of the simulated scatter data is used to build estimators that predict grating parameters from a measured optical scatter pattern. Combining scatterometry, computer simulations ofscauer, and statisticalanalysis to constructestimators avoids theproblems ofproducing a setofcalibration samples and finding an accurate and precise reference method to measure the grating parameters of interest.The second problem we consider is the prediction ofdepths ofcylindrical cells etched into Silicon. A dome scatterometer is used to collect the two-dimensional diffraction signal and in this case the experimental data is used to construct a data base of scatter signals. The etch depths are obtained using cross section SEM techniques. Using some ofthe scatter data to build an estimator and the remaining data for testing we obtain excellent agreement between the predicted and measured etched depths. 0-8194-1242-2/93/$6.00 Downloaded From: http://proceedings.spiedigitallibrary.org/ on 07/03/2016 Terms of Use: http://spiedigitallibrary.org/ss/TermsOfUse.aspxThegrating parameter estimation problem may also be viewedas apatternrecognition problem, whereby a distinct diffraction signal is associated with a specific grating shape. In order for this technique to work alarge calibration database ofdiffraction signals must be generated. It has been shown by Gottscho et. al. [19] that a neural network may be trained to classify the grating from its SPIE Vol. 1992 Miniature and Micro-Optics and Micromechanics (1993) / 171 Downloaded From: http://proceedings.spiedigitallibrary.org/ on 07/03/2016 Terms of Use: http://spiedigitallibrary.org/ss/TermsOfUse.aspx SPIE Vol. 1992 Miniature and Micro-Optics and Micromechanics (1993)! 177 1 6 11 16 Downloaded From: http://proceedings.spiedigitallibrary.org/ on 07/03/2016 Terms of Use: http://spie...

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Section: Introductionmentioning

confidence: 99%

Grating parameter estimation using scatterometry

et al. 1993

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Photolithography

Leuschner

Pawlowski²

2013

Materials Science and Technology

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The sections in this article are Introduction Exposure Tools Image Formation and Resolution Contact and Proximity Printing Optical Mask Aligner X‐Ray Stepper Projection Printing Near UV Projection Systems Deep UV Projection Systems Nonconventional UV Lithography Post‐Optical Lithography Photoresist Processing Quality Control and Resist Deposition Purity and Storage Stability Resist Coating Resist Exposure and Development Characteristic Curve and Standing Wave Effects Process Latitudes Dissolution Rate and Development Methods Pattern Inspection and Resist Profile Simulation Etching, Resist Stripping and Planarization Photoresists Principles of Photoresist Chemistry Negative‐Tone Resists Photocrossslinking Via Azides Free‐Radical‐Initiated Polymerization Acid‐Catalyzed Crosslinking Positive‐Tone Resists Dissolution Inhibition/Dissolution Promotion Acid‐Catalyzed Deblocking Polymer Degradation Solvents for Photoresists and Main Resist Suppliers Special Photoresist Techniques Nonconventional Diazo Resist Processes Resist Profile Modification and Image Reversal Bilayer Systems for Contrast Enhancement Suppression of Reflections and Standing Wave Effects Dyed Resists Antireflective Layers Silicon‐Containing Multilayer Resists Negative‐Tone Silicon Bilayer Resists Positive‐Tone Silicon Bilayer Resists Top Surface Imaging Gas Phase Silylation Systems Liquid Phase Silylation Systems Trends in Photolithography

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Photolithography

Leuschner

Pawlowski²

2000

Handbook of Semiconductor Technology Set

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Postexposure bake characteristics of a chemically amplified deep-ultraviolet resist

Cited by 10 publications

References 7 publications

Grating parameter estimation using scatterometry

Grating parameter estimation using scatterometry

Photolithography

Photolithography

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