Postgrowth wavelength tuning of InGaAsP/InP multiple quantum wells using dielectric-cap disordering

Abstract

lmpurity-free quantum well disordering has been used for the wavelength hrning of strained InGaAsP/lnP multiple-quantum-well (MQW) structures. By 'implementing diyerent kinds of dielectric caps, damage enhanced and thermally induced quantum well intermirings' were carried out for the bandgap engineering of the MQ W