“…Similarly, for the α-SiP monolayer, the pathways between two neighboring Si sites (the most stable sites) through the H site and P site, respectively, are referred as Si−H−Si and Si− Here, Si−H−Si is the energetically favorable path for the α-SiP monolayer with a minimum Li diffusion barrier of 0.16 eV, which is lower than that of previously reported anodic materials such as MoS 2 (0.57 eV), 54 graphene (0.33 eV), 50 germanene (0.20 eV), 22 stanene (0.25 eV), 22 VS 2 (0.22 eV), 55 Si 2 BN (0.18 eV), 56 silicene (0.35 eV), 51 graphite (0.40 eV), 52 AlN (0.40 eV), 53 B 3 S (0.40 eV), 53 β 1s borophene (0.40 eV), 53 β 12 borophene (0.66 eV), 53 TiO 2 (0.65 eV), 16 phosphorene (0.76 eV), 23 h-AlC (0.78 eV), 12 MoN 2 (0.78 eV), 50 and N-graphdiyne (0.79 eV). 16 The diffusion energy barrier of 0.30 and 0.16 eV for α-SiX (X = N, P) monolayers, respectively, suggests the high diffusivity of Li atom over the α-SiX monolayers.…”