Potential gallium oxynitrides with a derived spinel structure

Lowther, J. E.; Wagner, Thomas; Kinski, Isabel; Riedel, Ralf

doi:10.1016/j.jallcom.2003.09.125

Cited by 25 publications

(19 citation statements)

References 40 publications

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“…The optical properties of gallium oxynitride are poorly known; however, from theoretical calculations it has been shown that the band gap depends on composition and phase. For the spinel-Ga 3 O 3 N phase, the energy gap may be very similar to GaN [29] and density-functional calculations of the -phase of the Ga-O-N system as a function of GaN content has predicted a variation of the band gap from 2.9 eV for -Ga 3 O 3 N to 3.5 eV for -Ga 2 O 3 [30]. Density-functional calculations typically underestimates the band gap with 20-50%, thus, the measured photoluminescence peak energy of 3.75 eV might be expected for near bandgap transitions in oxynitrides.…”

Section: Methodsmentioning

confidence: 99%

Growth of GaN nanotubes by halide vapor phase epitaxy

et al. 2011

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We have investigated low temperature growth of GaN nanostructures using halide vapour phase epitaxy on c-oriented Al 2 O 3 and Au-coated Al 2 O 3 substrates. Depending on the III/V ratio and the growth temperature, the shape and density of the structures could be controlled. By increasing the GaCl partial pressure, the structure changed from dot like to nanotubes. The nanotubes, which could be open or closed, were about 1 µm long with a diameter of typically 200 nm. In addition, it was observed that the nanostructures were spontaneously nucleated at droplets of Ga or, when using Au coated Al 2 O 3 , on droplets of Au/Ga alloy. By varying the growth temperature, the inner diameter of the nanotubes could be controlled. The experimental results suggest that this approach with prepatterned Au-coated Al 2 O 3 substrates has the potential for fabrication of well-organized nanotubes with a high density.

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Section: Methodsmentioning

confidence: 99%

Growth of GaN nanotubes by halide vapor phase epitaxy

et al. 2011

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“…For the high-pressure / high-temperature treatment, the starting material was a nanocrystalline gallium oxonitride ceramic with a mean N/O ratio of 0.86 that was prepared from [Ga(O t Bu) 2 NMe 2 ] 2 as precursor at 350…”

Section: Resultsmentioning

confidence: 99%

“…Therefore, the precursor [Ga(O t Bu) 2 NMe 2 ] 2 was distributed in an Al 2 O 3 boat placed in the hottest zone of a furnace within a quartz glass Schlenk tube. The pyrolysis was performed in dry ammonia with a heating rate of 100 • C/h up to the holding temperature of 350 • C. The maximum temperature was kept constant for two hours with subsequent cooling to ambient temperatures.…”

Section: Methodsmentioning

confidence: 99%

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High-Pressure Synthesis of a Gallium Oxonitride with a Spinel-Type Structure

Kinski

Miehe

Heymann

et al. 2005

Zeitschrift Für Naturforschung B

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The new compound Ga 2.81 O 3.57 N 0.43 was crystallized under high-pressure / high-temperature conditions in a spinel-type structure from a prestructured gallium oxonitride ceramic, which was obtained from the single-source molecular precursor [Ga(O t Bu) 2 NMe 2 ] 2 by thermal treatment in an ammonia atmosphere. The optimized precursor-derived gallium oxonitride ceramic remains nanocrystalline up to 600 • C and can be transformed at 7 GPa and 1100 • C into the crystalline phase Ga 2.81 O 3.57 N 0.43 . The structure, homogeneity, and nitrogen to oxygen ratio were determined using TEM coupled with an electron energy loss spectrometer (EELS) and an energy dispersive X-ray (EDX) spectrometer. For phase analysis and structure confirmation, X-ray powder diffraction data were measured.

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“…al. 16 , and has since been synthesized recently by several groups 12,14,17 . The large amount of interest in this material is due to the wide spread use of its precursors, w -GaN and β-Ga 2 O 3 .…”

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Anion ordering in spinel-type gallium oxonitride

et al. 2011

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The specific locations of the anions -nitrogen and oxygen -in the crystallographic sites are not known in the spinel-type gallium oxonitride. We report here on an indirect method for determining the specific location of the light elements, N and O, in a defect spinel-structured gallium oxonitride, Ga2.79O3.05N0.76. The locations of elements that are adjacent in the periodic table (∆Z = ±1) are indistinguishable with conventional XRD techniques. However, by examining the local electronic structure we show that the anions are spatially ordered such that, R3m (No. 166) is the most appropriate defect free space group. Finally, we have determined experimentally the electronic band gap of Ga2.79O3.05N0.76 to be 2.95 ± 0.30, agreeing with our calculated value of 2.79 eV (direct) for Ga3O3N using MBJLDA.

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Potential gallium oxynitrides with a derived spinel structure

Cited by 25 publications

References 40 publications

Growth of GaN nanotubes by halide vapor phase epitaxy

Growth of GaN nanotubes by halide vapor phase epitaxy

High-Pressure Synthesis of a Gallium Oxonitride with a Spinel-Type Structure

Anion ordering in spinel-type gallium oxonitride

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