Potential imaging of pentacene organic thin-film transistors

Abstract

Scanning Kelvin probe microscopy (SKPM) has been used to simultaneously obtain high-resolution topographical and potential images of pentacene organic thin-film transistors (OTFTs) during device operation. SKPM images of OTFTs show large potential drops at the source with the magnitude dependent on contact metallurgy and relatively small potential drops at grain boundaries in polycrystalline pentacene films.

Mechanical force sensors using organic thin-film transistors

“…This conclusion is in line with previous reports on the importance of properly contacting pentacene. 13,15 …”

Influence of film structure and light on charge trapping and dissipation dynamics in spun-cast organic thin-film transistors measured by scanning Kelvin probe microscopy

“…[11][12][13][14] Proximal probe techniques, such as scanning Kelvin probe microscopy (SKPM), allow us to fully explore the structure-property relationships in working OTFT structures. [14][15][16][17][18][19][20][21][22][23][24][25] SKPM provides the ability to monitor changes in charge transport phenomena in both space and time, a capability not afforded by traditional electrical performance measurements a Author to whom correspondence should be addressed. Electronic mail: lucile.teague@srnl.doe.gov alone.…”

Probing stress effects in single crystal organic transistors by scanning Kelvin probe microscopy

“…© 2010 American Institute of Physics Scanning Kelvin probe microscopy (SKPM) has demonstrated utility in correlating the relationship between film structure and charge transport in organic thin-film transistor (OTFT) devices as well as providing a detailed view of charge injection at the source and drain contacts. [1][2][3][4][5][6][7] While traditional field effect transistor (FET) I-V (performance) measurements yield the average mobility of the device, SKPM offers the advantage of probing the local mobility of the device. Previous studies of rubrene single crystal (SC) OTFTs utilized SKPM data, specifically the slope of the potential profile in the device channel (V/µm), to directly calculate the intrinsic charge mobilities of individual devices (µ).…”