Potential of a rotary stage electron beam mastering system for fabricating patterned magnetic media

Abstract

To fabricate master templates of high-density patterned magnetic media, the authors developed a high-resolution and high-throughput rotary stage electron beam mastering system. They accomplished the fabrication of discrete track media groove patterns with 45nm track pitch, and also a dense bit array with both track and bit pitch of 35nm for bit patterned media under the conditions of a bit rate of 1.22MHz∕bit at 50kV acceleration voltage. The high resolution and high throughput are derived from using a continuous stage movement flyback lithography (CSFL) function. CSFL is enabled by differentiated capabilities, such as an electron optical column that achieves a large beam current at a small beam diameter, and a friction-driven slider stage that provides a highly accurate positioning capability and a dynamic focus correction feature and r-theta stage driving. The CSFL capability, working in conjunction with a blankingless beam shift lithography (BLSL), is very effective for fabricating various kinds of servo pattern elements, such as grooves and dots, grooves and right-angled grooves, grooves and half-pitch-shift dot arrays, and various pit length patterns, to construct effective servo patterns.

Fabrication and Characterization of Large-Area, Semiconducting Nanoperforated Graphene Materials

“…More recently with an experimental electron beam resist system features down to 10 nm have been demonstrated. 13 However the second challenge is that electron-beam lithography is a serial technique, which limits its throughput and applicability to the large-area patterning of graphene. Thus, in order to more practically realize nanostructured graphene-based materials, new patterning techniques that can be extended to large areas with sub-20nm resolution are needed.…”

“…However, 20 nm is on the threshold of what can easily be achieving using conventional electon beam lithography due to known electron scattering effects in common electron-beam resists. More recently with an experimental electron beam resist system features down to 10 nm have been demonstrated . However the second challenge is that electron-beam lithography is a serial technique, which limits its throughput and applicability to the large-area patterning of graphene.…”

Flexible Porous Bismuth Telluride Thin Films with Enhanced Figure of Merit using Micro‐Phase Separation of Block Copolymer

“…Various processes are available for fabricating nano‐ or submicron‐scale structures on organic polymer matrices using both bottom‐up and top‐down approaches. Some examples are the microphase separation of BCPs, nanoimprinting, and electron beam etching . The phase separation of BCPs allows the scale of the fabricated structures to be controlled through the molecular weight ratio of the constituent polymer units.…”

One‐Step Direct‐Patterning Template Utilizing Self‐Assembly of POSS‐Containing Block Copolymers

“…[2] Emerging candidates to address the need for smaller features are ArF immersion lithography (193 nm wavelength radiation) [3] and extreme ultraviolet (EUV) lithography. [4] Electron-beam lithography has further pushed the feature sizes down to sub 10 nm, [5] but issues such as cost and low throughput still need to be addressed.…”