Potential of low-voltage organic transistors with high on-state drain current for temperature sensor development

Ishaku, Amayikai A.; Glesková, Helena

doi:10.1016/j.orgel.2021.106152

Cited by 5 publications

(3 citation statements)

References 33 publications

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“…To further study the effect of biasstress on FET characteristics, a constant bias of V G (-4 V) and V D (-1 V) is applied for a duration of 2800 s, and no degradation of I on is observed. [54,55] An array of 5 × 8 FETs is further fabricated to examine the uniformity of these untraconformal FETs. As shown in Figure 6d, the transfer curves of these 40 FETs almost overlap each other with a narrow distribution at gate voltages (V G ) of -4-4 V and a source-drain voltage (V D ) of -1 V. Statistical analysis reveals that this array of FETs have on currents of 4.1 ± 0.4 μA, on/off ratios of 1.4 ± 0.5 × 10 5 , mobilities of 39.9 ± 2.2 cm 2 V −1 s −1 , threshold voltages (V th ) of -0.9 ± 0.1 V, and negligible hysteresis (64.4 ± 30.6 mV) (Figure 6e,f; Figure S22, Supporting Information).…”

Section: Resultsmentioning

confidence: 99%

Aramid Nanodielectrics for Ultraconformal Transparent Electronic Skins

Zhao,

et al. 2023

Advanced Materials

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On‐skin electronics require minimal thicknesses and decent transparency for conformal contact, imperceptible wearing, and visual aesthetics. It is challenging to search for advanced ultrathin dielectrics capable of supporting the active components while maintaining bending softness, easy handling, and wafer‐scale processability. Here, self‐delaminated aramid nanodielectrics (ANDs) are demonstrated, enabling any skin‐like electronics easily exfoliated from the processing substrates after complicated nanofabrication. In addition, ANDs are mechanically strong, chemically and thermally stable, transparent and breathable, therefore are ideal substrates for soft electronics. As demonstrations, compliant epidermal electrodes comprising silver nanowires and ANDs can successfully record high‐quality electromyogram signals with low motion artifacts and satisfying sweat and water resistance. Furthermore, ANDs can serve as both substrates and dielectrics in single‐walled carbon nanotube field‐effect transistors (FETs) with a merely 160‐nm thickness, which can be operated within 4 V with on/off ratios of 1.4 ± 0.5 × 105, mobilities of 39.9 ± 2.2 cm2 V−1 s−1, and negligible hysteresis. The ultraconformal FETs can function properly when wrapped around human hair without any degradation in performance.This article is protected by copyright. All rights reserved

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Section: Resultsmentioning

confidence: 99%

Aramid Nanodielectrics for Ultraconformal Transparent Electronic Skins

Zhao,

et al. 2023

Advanced Materials

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“…A recent work by Ishaku and Gleskova reported a temperature sensor with a DNTT-OFET connected to a commercially available thermistor with a negative temperature coefficient (NTC) [74]. The OFET included a dielectric of aluminum oxide (AlO x ) with an octadecylphosphonic acid (C 18 PA) SAM for low voltage operation.…”

Section: Thermistor As Sensing Elementmentioning

confidence: 99%

“…The array performed well between 29.8 and 37.0 • C with minimal hysteresis (1 • C) and a spatial resolution of 5 mm. Furthermore, the device had a rapid response time of 100 ms and remained stable for 1800 thermal cycles within the operating temperature range.A recent work by Ishaku and Gleskova reported a temperature sensor with a DNTT-OFET connected to a commercially available thermistor with a negative temperature coefficient (NTC)[74]. The OFET included a dielectric of aluminum oxide (AlO x ) with an octadecylphosphonic acid (C 18 PA) SAM for low voltage operation.…”

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confidence: 99%

Temperature Sensors Based on Organic Field-Effect Transistors

et al. 2021

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The rapid growth of wearable electronics, Internet of Things, smart packaging, and advanced healthcare technologies demand a large number of flexible, thin, lightweight, and ultralow-cost sensors. The accurate and precise determination of temperature in a narrow range (~0–50 °C) around ambient temperatures and near-body temperatures is critical for most of these applications. Temperature sensors based on organic field-effect transistors (OFETs) have the advantages of low manufacturing cost, excellent mechanical flexibility, easy integration with other devices, low cross-sensitivity, and multi-stimuli detectability and, therefore, are very suitable for the above applications. This article provides a timely overview of research progress in the development of OFET-based temperature sensors. First, the working mechanism of OFETs, the fundamental theories of charge transport in organic semiconductors, and common types of OFET temperature sensors based on the sensing element are briefly introduced. Next, notable advances in the development of OFET temperature sensors using small-molecule and polymer semiconductors are discussed separately. Finally, the progress of OFET temperature sensors is summarized, and the challenges associated with OFET temperature sensors and the perspectives of research directions in this field are presented.

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Flexible organic field-effect transistors-based biosensors: progress and perspectives

Zhang

et al. 2023

Anal Bioanal Chem

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Organic field-effect transistors (OFETs) have been proposed beyond three decades while becoming a research hotspot again in recent years because of the fast development of flexible electronics. Many novel flexible OFETs-based devices have been reported in these years. Among these devices, flexible OFETs-based sensors made great strides because of the extraordinary sensing capability of FET. Most of these flexible OFETs-based sensors were designed for biological applications due to the advantages of flexibility, reduced complexity, and lightweight. This paper reviews the materials, fabrications, and applications of flexible OFETs-based biosensors. Besides, the challenges and opportunities of the flexible OFETs-based biosensors are also discussed. Graphical abstract

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Potential of low-voltage organic transistors with high on-state drain current for temperature sensor development

Cited by 5 publications

References 33 publications

Aramid Nanodielectrics for Ultraconformal Transparent Electronic Skins

Aramid Nanodielectrics for Ultraconformal Transparent Electronic Skins

Temperature Sensors Based on Organic Field-Effect Transistors

Flexible organic field-effect transistors-based biosensors: progress and perspectives

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