Potential outstanding physical properties of novel black arsenic phosphorus As0.25P0.75/As0.75P0.25 phases: a first-principles investigation

Liu, Fangqi; Zhang, Xiaolin; Gong, Pengwei; Wang, Tongtong; Yao, K.L.; Zhu, Sicong; Lü, Yan

doi:10.1039/d1ra08154c

Cited by 18 publications

(11 citation statements)

References 38 publications

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“…And the photocurrent’s sensitivity to changes in the armchair and zigzag directions varies for distinct components, especially the As 0.25 P 0.75 component’s phase being opposite in both directions, which indicates strong polarization anisotropy. This is consistent with our prior findings with electronic changes . As the composition changes, it can be found that the composition mainly affects the magnitude of the response to polarized light with little effect on the phase modulation with polarization angle.…”

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confidence: 93%

“…This is consistent with our prior findings with electronic changes. 33 As the composition changes, it can be found that the composition mainly affects the magnitude of the response to polarized light with little effect on the phase modulation with polarization angle. Significantly higher photocurrent for As x P 1−x at x ≥ 0.75.…”

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confidence: 99%

“…The components of b-As x P 1– x can be optimized for specific uses with the alloying strategy. , Due to the tunability of their layer numbers and chemical composition environment, the band gap of bulk b-As x P 1– x can be fully turned over the range from 0.15 to 0.3 eV. Several recent theoretical studies on b-As x P 1– x have also revealed its excellent physicochemical properties. − For example, Shojaei et al investigated the electrical structure in detail and estimated its carriers up to 10 000 cm 2 V –1 s –1 , and Sun et al calculated its lattice thermal conductivity, highlighting the effect of atomic arrangement . Zhu et al calculated the electronic band structures of As x P 1– x and expected a structure transition from α-phase to β-phase at x = 0.93. , Meanwhile, As x P 1– x has been used experimentally in photonics devices such as photodetectors, saturable absorbers, optical logic devices, etc. ,, The broadband nonlinear optical response of As 0.4 P 0.6 nanomaterial has high optical stability by virtue of spatial self phase modulation (SSPM) .…”

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Bimetallic Alloys b-As_xP_1–x at High Concentration Differences: Ideal for Photonic Devices

Liu

Xue

et al. 2022

J. Phys. Chem. Lett.

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Black arsenic phosphorus (b-As x P 1−x ) is expected to be one of the primary materials for future photonic devices. However, the x-factor is randomly estimated and applied in photonic devices in current studies, rather than systematically analyzing it for a comprehensive understanding. Herein, As x P 1−x switches from a direct band gap semiconductor to an indirect band gap one at x = 0.75. As x P 1−x at x ≤ 0.25 is capable of broadband absorption, while b-As x P 1−x at x ≥ 0.75 can only absorb at specific wavelengths in the perspective of the electron energy transition. Additionally, the optoelectronic response of the integral field-effect transistor configurations constructed with b-As x P 1−x is investigated systematically as a photodetector device. The photonic response characteristics show high polarization sensitivity at x ≥ 0.75, but a typical circuit system signal at x ≤ 0.25. These results suggest that b-As x P 1−x with high concentration differences is a perfect candidate for photonic material.

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Bimetallic Alloys b-As_xP_1–x at High Concentration Differences: Ideal for Photonic Devices

Liu

Xue

et al. 2022

J. Phys. Chem. Lett.

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“…35 The optical properties have been predicted to vary significantly with As/P stoichiometry and distribution, with most configurations of very narrow AsPNRs expecting direct bandgap semiconductors around 0.9 eV, while some configurations provide indirect gaps. 36 Here, AsPNRs have been synthesised by extending the lithium electride PNR synthesis to bAsP, which are incorporated into two devices to demonstrate and measure their properties.…”

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Production of Magnetic Arsenic-Phosphorus Alloy Nanoribbons with Small Band Gaps and High Hole Conductivities

Zhang

Shutt

et al. 2023

Preprint

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Quasi-1D nanoribbons provide a unique route to diversifying the properties of their parent 2D nanomaterial, introducing lateral quantum confinement and an abundance of edge sites. Here, a new family of nanomaterials is opened with the creation of arsenic-phosphorus alloy nanoribbons (AsPNRs). By ionically scissoring the layered crystal black arsenic-phosphorus using lithium electride followed by dissolution in amidic solvents, solutions of AsPNRs are formed. The ribbons are typically few-layered, several microns long with widths tens of nanometers across, and both highly flexible and crystalline. The AsPNRs are highly electrically conducting above 130 K due to their small band gap (ca. 0.035 eV), paramagnetic, and have high hole mobilities, as measured with the first generation of AsP devices, directly highlighting their properties and utility in electronic devices

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“…Structure ∆M (meV) ∆V (meV) ∆C(meV) µD (meV) Al/b-Parameters of the GC-FET structures under consideration[39][40][41].…”

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Effect of electron thermal conductivity on resonant plasmonic detection in the metal/black-AsP/graphene FET terahertz hot-electron bolometers

Ryzhii¹,

Tang²,

Otsuji³

et al. 2023

Preprint

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We analyze the two-dimensional electron gas (2DEG) heating by the incident terahertz (THz) radiation in the field-effect transistor (FET) structures with the graphene channels (GCs) and the black-phosphorus and black-arsenic gate barrier layers (BLs). Such GC-FETs can operate as bolometric THz detectors using the thermionic emission of the hot electrons from the GC via the BL into the gate. Due to the excitation of plasmonic oscillations in the GC by the THz signals, the GC-FET detector response can be pronouncedly resonant, leading to elevated values of the detector responsivity. The lateral thermal conductivity of the 2DEG can markedly affect the GC-FET responsivity, in particular, its spectral characteristics. This effect should be considered for the optimization of the GC-FET detectors.

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Potential outstanding physical properties of novel black arsenic phosphorus As_0.25P_0.75/As_0.75P_0.25 phases: a first-principles investigation

Abstract: In this study, we design seven stable phases of As0.25P0.75 and As0.75P0.25, focusing on their electrical and thermal properties through first-principles calculations.

Cited by 18 publications

References 38 publications

Bimetallic Alloys b-As_xP_1–x at High Concentration Differences: Ideal for Photonic Devices

Bimetallic Alloys b-As_xP_1–x at High Concentration Differences: Ideal for Photonic Devices

Production of Magnetic Arsenic-Phosphorus Alloy Nanoribbons with Small Band Gaps and High Hole Conductivities

Effect of electron thermal conductivity on resonant plasmonic detection in the metal/black-AsP/graphene FET terahertz hot-electron bolometers

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Potential outstanding physical properties of novel black arsenic phosphorus As0.25P0.75/As0.75P0.25 phases: a first-principles investigation

Abstract: In this study, we design seven stable phases of As0.25P0.75 and As0.75P0.25, focusing on their electrical and thermal properties through first-principles calculations.

Cited by 18 publications

References 38 publications

Bimetallic Alloys b-AsxP1–x at High Concentration Differences: Ideal for Photonic Devices

Bimetallic Alloys b-AsxP1–x at High Concentration Differences: Ideal for Photonic Devices

Production of Magnetic Arsenic-Phosphorus Alloy Nanoribbons with Small Band Gaps and High Hole Conductivities

Effect of electron thermal conductivity on resonant plasmonic detection in the metal/black-AsP/graphene FET terahertz hot-electron bolometers

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Potential outstanding physical properties of novel black arsenic phosphorus As_0.25P_0.75/As_0.75P_0.25 phases: a first-principles investigation

Bimetallic Alloys b-As_xP_1–x at High Concentration Differences: Ideal for Photonic Devices

Bimetallic Alloys b-As_xP_1–x at High Concentration Differences: Ideal for Photonic Devices