2001
DOI: 10.1117/12.410711
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Potentialities of sub-100-nm optical lithography of alternating and phase-edge phase-shift mask for ArF lithography

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“…However, the optical proximity correction (OPC) becomes challenging when the polygate pitch is less than 300nm because of phase-shifter twodimensional effects, low mask error factor (MEF) and interlayer correction from shifter to trim. At present there are a few papers [11][12] discussing ArF excimer alt-PSM technology for 100nm devices. Here, we report our studies using a calibrated resist OPC model for the double-exposure PSM for logic device polygates (110nm to 60nm).…”
Section: Introductionmentioning
confidence: 99%
“…However, the optical proximity correction (OPC) becomes challenging when the polygate pitch is less than 300nm because of phase-shifter twodimensional effects, low mask error factor (MEF) and interlayer correction from shifter to trim. At present there are a few papers [11][12] discussing ArF excimer alt-PSM technology for 100nm devices. Here, we report our studies using a calibrated resist OPC model for the double-exposure PSM for logic device polygates (110nm to 60nm).…”
Section: Introductionmentioning
confidence: 99%
“…In previous researches, the optical performances of DFAPS mask, such as CD variation, DOF, MEEF, etc., have been well investigated [3][4][5] . However, the change of optical performances due to mask parameters originated from the mask manufacturing process, such as optimal phase, mask structure, and phase margin, is relatively remained unknown.…”
Section: Introductionmentioning
confidence: 99%