Potentials and challenges of integration for complex metal oxides in CMOS devices and beyond

Kim, Y; Pham, Chau; Chang, Jane P.

doi:10.1088/0022-3727/48/6/063001

Cited by 10 publications

(9 citation statements)

References 187 publications

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“…3(b). 218,220 The growth of complex oxides on semiconducting substrates, particularly Si, has been intensively investigated, with the aim of integrating complex oxides in semiconductor platforms to realize multifunctional electronic and electro-optic devices 167,[251][252][253][254][255][256][257][258][259][260] and for using high-κ dielectric oxides as alternatives to SiO for gate dielectrics in MOSFET transistors. 170,[261][262][263] The challenge is to achieve epitaxial growth and a sharp interface without the formation of an interfacial oxide amorphous layer that may be formed by exposure of the clean semiconducting surface to the oxygen species required for the metal oxide growth or due to reaction with the oxide layer, that could degrade device performance.…”

Section: Batiomentioning

confidence: 99%

Epitaxial ferroelectric interfacial devices

Vaz

Bibès

Rabe

et al. 2021

Applied Physics Reviews

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Epitaxial ferroelectric interfacial devicesFerroelectric interfacial devices consist of materials systems whose interfacial electronic properties (such as a 2D electron gas or an interfacial magnetic spin configuration) are modulated by a ferroelectric layer set in its immediate vicinity. While the prototypical example of such a system is the ferroelectric field effect transistor first proposed in the 1950s, only with the recent advances in the controlled growth of epitaxial thin films and heterostructures, and the recent physical understanding down to the atomic scale of screening processes at ferroelectric-semiconducting and -metallic interfaces made possible by first principles calculations, have the conditions been met for a full development of the field. In this review, we discuss the recent advances in ferroelectric interfacial systems, with emphasis on the ferroelectric control of the electronic properties of interfacial devices with well ordered (epitaxial) interfaces. In particular, we consider the cases of ferroelectric interfacial systems aimed at controlling the correlated state, including superconductivity, Mott metallic-insulator transition, magnetism, charge, and orbital order, and charge and spin transport across ferroelectric tunnel junctions. The focus is on the basic physical mechanisms underlying the emergence of interfacial effects, the nature of the ferroelectric control of the electronic state, and the role of extreme electric field gradients at the interface in giving rise to new physical phenomena. Such understanding is key to the development of ferroelectric interfacial systems with characteristics suitable for next generation electronic devices based on controlling the correlated state of matter.

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Section: Batiomentioning

confidence: 99%

Epitaxial ferroelectric interfacial devices

Vaz

Bibès

Rabe

et al. 2021

Applied Physics Reviews

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“…Synthesis of porous CFO ,, and ALD deposition of BFO , have been discussed previously. A schematic of the synthesis can be found in Figure a.…”

Section: Methodsmentioning

confidence: 99%

“…46−48 Bismuth ferrite (BiFeO 3 or BFO), however, maintains higher d 33 values than PZT in the ultrathin (<5 nm) regime. 45,49,50 Thus, while PZT has a higher d 33 than BFO in the bulk, BFO is expected to have a higher d 33 in ultrathin films, meaning the magnetization changes are also expected to be larger. In this work, we thus focus on CFO/BFO composites and show that the trend of increasing multiferroic coupling with increasing porosity is robust across materials systems.…”

Section: Introductionmentioning

confidence: 99%

“…As described above, magnetization and strain changes in the CFO/PZT composites were the largest in the thinnest PZT-coated samples. However, the piezoelectricity of PZT becomes unstable below a certain thickness, greatly reducing its d 33 or piezoelectric coefficient (longitudinal strain change for a given electric field). − Bismuth ferrite (BiFeO 3 or BFO), however, maintains higher d 33 values than PZT in the ultrathin (<5 nm) regime. ,, Thus, while PZT has a higher d 33 than BFO in the bulk, BFO is expected to have a higher d 33 in ultrathin films, meaning the magnetization changes are also expected to be larger. In this work, we thus focus on CFO/BFO composites and show that the trend of increasing multiferroic coupling with increasing porosity is robust across materials systems.…”

Section: Introductionmentioning

confidence: 99%

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Increased Magnetoelectric Coupling in Porous Nanocomposites of CoFe₂O₄ and BiFeO₃ with Residual Porosity for Switchable Magnetic Devices

Patel

Karaba

Robertson

et al. 2023

ACS Appl. Nano Mater.

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In this work, multiferroic thin-film nanocomposites were synthesized by coating the inside of mesoporous, cobalt ferrite (CoFe2O4 or CFO) with varying thicknesses of piezoelectric bismuth ferrite (BiFeO3 or BFO) grown by atomic layer deposition (ALD). Since ALD allows for precise control of the BFO layer thickness, the amount of residual porosity inside the pores can be controlled. Upon electrical poling, the piezoelectric BFO strains to be under out-of-plane tension, and since BFO is covalently bound to CFO, this tensile stress is transferred from BFO to CFO. CFO is a negative magnetostrictive material, meaning its magnetization should decrease in the direction of tension. This decrease in magnetization was observed in out-of-plane magnetometry experiments. Interestingly, the magnetization changes were found to be largest in the samples with the most residual porosity, despite the fact that they contained the smallest volume of BFO. Indeed, while the fully filled samples had a similar magnetoelectric coefficient to other dense nanostructured BFO-CFO composites reported in the literature, composites with the most residual porosity showed an exceptionally large converse magnetoelectric coefficient of 1.2 × 10–6 s m–1, an order of magnitude higher than dense composites. Strain transfer was confirmed using high-resolution X-ray diffraction. Samples with more residual porosity showed larger strain changes, corroborating the magnetization data. This suggests that magnetoelectric coupling can be optimized by engineering residual porosity into multiferroic composites. Such systems have profound effects for a broad range of switchable magnetic devices, particularly in the microwave and spintronic space.

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“…MOS sensors are small and can be constructed as integrated circuits. However, the applications of MOS sensors are limited to “moderate” gases such as CO 2 and H 2 , and they are not suitable for sulfur containing gases which can bind with the sensing materials [ 48 , 49 , 50 , 51 ]. The operation of MOS sensors requires high temperatures of around 200–500 °C, which is beyond the temperature range that a common battery can achieve and, thus, limits practical field applications.…”

Section: Electronic Nose Detecting Technologymentioning

confidence: 99%

Plant Pest Detection Using an Artificial Nose System: A Review

Cui

Ling

Zhu

et al. 2018

Sensors

162

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This paper reviews artificial intelligent noses (or electronic noses) as a fast and noninvasive approach for the diagnosis of insects and diseases that attack vegetables and fruit trees. The particular focus is on bacterial, fungal, and viral infections, and insect damage. Volatile organic compounds (VOCs) emitted from plants, which provide functional information about the plant’s growth, defense, and health status, allow for the possibility of using noninvasive detection to monitor plants status. Electronic noses are comprised of a sensor array, signal conditioning circuit, and pattern recognition algorithms. Compared with traditional gas chromatography–mass spectrometry (GC-MS) techniques, electronic noses are noninvasive and can be a rapid, cost-effective option for several applications. However, using electronic noses for plant pest diagnosis is still in its early stages, and there are challenges regarding sensor performance, sampling and detection in open areas, and scaling up measurements. This review paper introduces each element of electronic nose systems, especially commonly used sensors and pattern recognition methods, along with their advantages and limitations. It includes a comprehensive comparison and summary of applications, possible challenges, and potential improvements of electronic nose systems for different plant pest diagnoses.

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Potentials and challenges of integration for complex metal oxides in CMOS devices and beyond

Cited by 10 publications

References 187 publications

Epitaxial ferroelectric interfacial devices

Epitaxial ferroelectric interfacial devices

Increased Magnetoelectric Coupling in Porous Nanocomposites of CoFe₂O₄ and BiFeO₃ with Residual Porosity for Switchable Magnetic Devices

Plant Pest Detection Using an Artificial Nose System: A Review

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Potentials and challenges of integration for complex metal oxides in CMOS devices and beyond

Cited by 10 publications

References 187 publications

Epitaxial ferroelectric interfacial devices

Epitaxial ferroelectric interfacial devices

Increased Magnetoelectric Coupling in Porous Nanocomposites of CoFe2O4 and BiFeO3 with Residual Porosity for Switchable Magnetic Devices

Plant Pest Detection Using an Artificial Nose System: A Review

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Increased Magnetoelectric Coupling in Porous Nanocomposites of CoFe₂O₄ and BiFeO₃ with Residual Porosity for Switchable Magnetic Devices