Power and Noise Optimization Techniques of RF Active Inductor Using Multi-Finger Gate Transistors

Hammadi, Aymen Ben; Haddad, Fayrouz; Saad, Sehmi; Besbes, Kamel

doi:10.1007/s12668-017-0483-2

Cited by 6 publications

(3 citation statements)

References 16 publications

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“…According to (14), the input-referred noise of the proposed AI is the sum of three different terms each of which belongs to M 1 , M 2 and M 3 , respectively. With regard to Equations ( 13) and ( 14), the noise contribution of M 1 and M 2 is reduced by a factor of (1/g m3 r o3 ) 2 compared to the conventional AI.…”

Section: Proposed Active Inductormentioning

confidence: 99%

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A low‐noise current‐reused CMOS active inductor by exploiting G _m ‐boosting technique

Ebrahimi

2021

IET Microwaves Antenna & Prop

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This work introduces a new low‐noise current‐reused CMOS active inductor (AI) based on Gyrator‐C configuration. In the proposed AI, a simple common‐source amplifier is utilised for boosting effective Gm and improving noise performance of the AI. While the Gm‐boosting technique improves the noise performance as well as the quality factor of the inductor, a resistor is also added to the feedback path for more quality factor improvement. Rigorous analysis of the proposed circuit shows a significant noise performance and quality factor enhancement. In order to verify the concept and confirm the mathematical analysis, the AI is designed and simulated in a commercial 0.18 μm RF‐CMOS technology. The simulation results show that the proposed inductor operates in 1 to 7.2 GHz frequency range, has a 9 nH inductance at 2.864 GHz frequency and 650 μW total power dissipation at 1.8‐V supply voltage. Maximum quality factor of 90 is achieved at 2.864 GHz frequency and a quality factor greater than 40 is obtained from 2.4 to 3.3 GHz. The input‐referred current noise of the proposed inductor is as low as 22 pA/√Hz showing 30.5% improvement compared to the conventional AI. The proposed AI is also tunable and sweeping the tuning voltage results in changing extracted inductance from 4.35 to 15.2 nH with only a chip area of 0.003 mm2. Post‐layout and different Monte Carlo simulation results also confirm the robust operation of the proposed AI against different process non‐idealities.

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Section: Proposed Active Inductormentioning

confidence: 99%

“…It is worth mentioning that, in addition to the above circuit approaches, a physical layout technique is presented in Ref. [14] in which multi‐finger transistors are used for achieving a low noise AI.…”

Section: Literature Reviewmentioning

confidence: 99%

A low‐noise current‐reused CMOS active inductor by exploiting G _m ‐boosting technique

Ebrahimi

2021

IET Microwaves Antenna & Prop

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“…In addition, to meet the required performances mainly in terms of power consumption, noise figure and area occupation, several design optimization approaches, such as voltage scaling and multi‐gate finger transistors discussed in Ref. , have been used.…”

Section: Tunable Bandpass Filter Designmentioning

confidence: 99%

RF and microwave reconfigurable bandpass filter design using optimized active inductor circuit

Hammadi

Haddad

Saad

et al. 2018

Int J RF Microw Comput Aided Eng

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In this article, a design methodology of an active bandpass filter (BPF) using tunable active inductor (TAI) achieving wide frequency contiguous tuning range (FTR) is presented. The tunable BPF is realized with a differential TAI (DTAI) employing two‐reconfiguration mechanisms one for coarse‐tuning using a controllable current source while the fine‐tuning is performed through a variable feedback resistance. The center frequency tuning is performed through the variation of the DTAI control voltages. A cross‐coupled pair based negative resistance technique is also applied to compensate the resistive losses of equivalent RLC resonator. The filter performances are significantly improved using several optimization techniques such as voltage scaling and multigate finger techniques. The proposed BPF is simulated using 0.13 μm CMOS technology. The filter achieves an insertion loss (IL) of 26.62‐33.45 dB over the tuning range 1.16‐3.27 GHz with a relative bandwidth of 1.3%‐3.4%. The noise figure and input 1‐dB compression point at 1.84 GHz are 14.93 dB and 2.72 dBm, respectively. The designed RF filter consumes an average power of 5 mW at 1 V supply voltage.

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A compact and tunable active inductor-based bandpass filter with high quality factor for Wireless LAN applications

Gorjizad,

Shojaee,

Abrishamifar

2024

AEU - International Journal of Electronics and Communications

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Power and Noise Optimization Techniques of RF Active Inductor Using Multi-Finger Gate Transistors

Cited by 6 publications

References 16 publications

A low‐noise current‐reused CMOS active inductor by exploiting G _m ‐boosting technique

A low‐noise current‐reused CMOS active inductor by exploiting G _m ‐boosting technique

RF and microwave reconfigurable bandpass filter design using optimized active inductor circuit

A compact and tunable active inductor-based bandpass filter with high quality factor for Wireless LAN applications

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Power and Noise Optimization Techniques of RF Active Inductor Using Multi-Finger Gate Transistors

Cited by 6 publications

References 16 publications

A low‐noise current‐reused CMOS active inductor by exploiting G m ‐boosting technique

A low‐noise current‐reused CMOS active inductor by exploiting G m ‐boosting technique

RF and microwave reconfigurable bandpass filter design using optimized active inductor circuit

A compact and tunable active inductor-based bandpass filter with high quality factor for Wireless LAN applications

Contact Info

Product

Resources

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A low‐noise current‐reused CMOS active inductor by exploiting G _m ‐boosting technique

A low‐noise current‐reused CMOS active inductor by exploiting G _m ‐boosting technique