Power Comparison Between High-Speed Electrical and Optical Interconnects for Interchip Communication

Abstract-We present observations of quantum confinement and quantum-confined Stark effect (QCSE) electroabsorption in Ge quantum wells with SiGe barriers grown on Si substrates, in good agreement with theoretical calculations. Though Ge is an indirect gap semiconductor, the resulting effects are at least as clear and strong as seen in typical III-V quantum well structures at similar wavelengths. We also demonstrate that the effect can be seen over the C-band around 1.55-µm wavelength in structures heated to 90• C, similar to the operating temperature of silicon electronic chips. The physics of the effects are discussed, including the effects of strain, electron and hole confinement, and exciton binding, and the reasons why the effects should be observable at all in such an indirect gap material. This effect is very promising for practical high-speed, low-power optical modulators fabricated compatible with mainstream silicon electronic integrated circuits.Index Terms-Electroabsorption effect, germanium, optical interconnections, optical modulators, quantum-confined Stark effect (QCSE), silicon.

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“…potentially solving severe scaling problems of electrical wiring being experienced within electronic systems today [5]- [7].…”

mentioning

confidence: 99%

Quantum-Confined Stark Effect in Ge/SiGe Quantum Wells on Si for Optical Modulators

Kuo

Lee

et al. 2006

IEEE J. Select. Topics Quantum Electron.

154

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“…The drain current increases in response to the half of VDD (1.1V) from zero according to the curve line got from (8) and (9). The drain current decreases in response to zero from 0.55V according to the inverse curve line formed by (8) and (9 …”

Section: Generation Mechanism Of the Semwmentioning

confidence: 97%

“…2. b, each I dsat2 and I dsat2R was got from (8) and (9) by using the wave shape of V ds1 in Fig. 2.…”

mentioning

confidence: 99%

Solitary Electromagnetic Waves Generated by the Switching Mode Circuit

Tohya¹,

Toya²

2011

Behaviour of Electromagnetic Waves in Different Media and Structures

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“…An effective solution to overcome these issues is represented by optical interconnection networks based on optical switching [2]. By exploiting simultaneously different multiplexing domains, further enhancing of the scalability and the total capacity can be obtained [3].…”

Section: Introductionmentioning

confidence: 99%

Two-layer interconnection network architectures based on integrated concentric orbital angular momentum emitters

Scaffardi

Zhang

Malik

et al. 2017

Advanced Photonics 2017 (IPR, NOMA, Sensors, Networks, SPPCom, PS)

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Power Comparison Between High-Speed Electrical and Optical Interconnects for Interchip Communication

Cited by 163 publications

References 29 publications

Quantum-Confined Stark Effect in Ge/SiGe Quantum Wells on Si for Optical Modulators

Quantum-Confined Stark Effect in Ge/SiGe Quantum Wells on Si for Optical Modulators

Solitary Electromagnetic Waves Generated by the Switching Mode Circuit

Two-layer interconnection network architectures based on integrated concentric orbital angular momentum emitters

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