Power Conversion Systems Enabled by SiC BiDFET Device

Bhattacharya, Subhashish; Narwal, Ramandeep; Shah, Suyash Sushilkumar; Baliga, B. Jayant; Agarwal, Aditi; Kanale, Ajit; Han, Kijeong; Hopkins, Douglas C.; Cheng, Tzu-Hsuan

doi:10.1109/mpel.2023.3237060

Cited by 5 publications

(1 citation statement)

References 10 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Silicon carbide (SiC) semiconductors favor faster switching, lower switching loss and lower turn-on voltage compared with the traditional silicon technology [1][2][3]. The fast-switching capability of the SiC switches provide the opportunity for developing power electronic converters with high switching frequency and high voltage ratings.…”

Section: Introductionmentioning

confidence: 99%

Parasitic-Based Model for Characterizing False Turn-On and Switching-Based Voltage Oscillation in Hybrid T-Type Converter

Babaki,

Golsorkhi,

Christensen

et al. 2024

Electronics

View full text Add to dashboard Cite

High frequency and high voltage switching converters utilizing wide bandgap semiconductors are gaining popularity thanks to their compactness and improved efficiency. However, the faster switching requirements gives rise to new challenges. A key issue is the increased oscillation of the drain–source voltage caused by the switching action of the complementary switch in the same phase or change of state of the other phase switches. The voltage stress caused by these oscillations can damage the switch. Furthermore, the high dv/dt during turning-on of one switch might result in false turn-on of the complementary switch due to the miller effect. In this paper, these issues are investigated in a T-type converter through analytical and experimental analysis. Based on the proposed analytical approach, simple and cost-wise solutions utilizing an optimum design of gate driver circuits and circuit layout modifications can be developed to cope with the aforementioned issues. A comprehensive analytical model of the converter with consideration of parasitic capacitances and inductances is developed. By performing sensitivity analysis on the model, the effect of the parasitic parameters on the drain–source voltage oscillation and gate–source voltage amplitude in case of false turn-on is studied. The validity of the model is then assessed through numerical simulations and experimental results.

show abstract

Section: Introductionmentioning

confidence: 99%