Power cycling ageing tests at 200°C of SiC assemblies for high temperature electronics

Abstract

The reliability of power electronic modules is of utmost importance all the more so since they would be exposed to high ambient temperatures and frequent power cycling. Aging tests at 200°C have been done using power cycling in order to study some packaging materials for high temperature power electronics. Junction temperature swings were performed between 196°C and 245°C and tests have concerned the die attach, wire bond and die metallization materials. Experimental results have shown that AuGe solder material is highly resistant comparatively to a high leaded material. Furthermore, for die top-metal/wire couple, gold material exhibits a better performance compared to Aluminum.

Failure and Reliability Analysis of a SiC Power Module Based on Stress Comparison to a Si Device

“…It is considered that the in-service lifetime of SiC solder layer is only a third of the benchmark Si device. In [21], cracks and voids are observed on the solder edges of the Si IGBTs and SiC diodes after power cycling.…”