Power Efficient Current Driver Based on Negative Boosting for High-Speed Lasers

Arslan, Saad; Shah, Syed Asmat Ali; Kim, HyungWon

doi:10.3390/electronics8111309

Cited by 3 publications

(2 citation statements)

References 15 publications

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“…The avalanche bipolar junction transistors can produce high power pulses, but pulse widths are short and the topology requires high voltage (300 V in [91]). An interesting capacitive boosting solution is described in [92], where a switched capacitance is used to provide extra compliance voltage during the current rise time. The solution described can only achieve pulses up to 1 A, and pulse duration is limited by the capacitance used.…”

Section: Driver Topologies Analysismentioning

confidence: 99%

Compact Laser Driver for Ultrasonic Arbitrary Position and Width Pulse Sequences Generation

Svilainis

Chaziachmetovas

Eidukynas

et al. 2021

IEEE Trans. Instrum. Meas.

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Laser ultrasound offers several benefits in comparison to immersion or air coupled ultrasound: it directly generates stress on the sample surface; it has a wide bandwidth and a small acoustic source can be produced. Conventionally, high power pulsed lasers are required therefore equipment is bulky and expensive. Here we propose to use mid-power laser diodes, which are small and low cost. To solve the low signal amplitude problem with lower power lasers, the use of spread spectrum signal, arbitrary position and width binary pulse sets is proposed. To date, a laser driver for this task has not been available. This paper describes the development of such a compact driver, where the essential electronics occupy an area of 10x20 mm. The whole system with a fixture for kinematic mount is comparable in size to a conventional piezoelectric ultrasonic transducer. The driver can supply pulse sets of up to 40 A. Individual pulse duration can vary between 20 ns to 1000 ns (0.5-25 MHz ultrasound range) and the total pulse train duration is limited by the laser type used. Experiments show that up to 10 s long pulse sets can be used at 10 A current, without laser degradation. Current waveforms, beam profile and optical response signals were measured for three rectified topologies. It was concluded, that the GaN based constant current switch topology has the best performance, but a power MOSFET in a source current feedback topology can also be used to generate pulses down to 20 ns. Photoacoustic response signals from chirp and phase shift keying modulation have been demonstrated.

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Section: Driver Topologies Analysismentioning

confidence: 99%

Compact Laser Driver for Ultrasonic Arbitrary Position and Width Pulse Sequences Generation

Svilainis

Chaziachmetovas

Eidukynas

et al. 2021

IEEE Trans. Instrum. Meas.

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“…A flip-chip like structure can reduce the cost of the sensor module because there is no need for wire bonding and the device is thinner and has less area. By removing wire bonding, the parasitic inductance and resistance of the device can be further reduced, thus improving the rise time [14]. This can provide superior depth resolution under high-frequency operation.…”

Section: Introductionmentioning

confidence: 99%

High-Speed and High-Power 940 nm Flip-Chip VCSEL Array for LiDAR Application

Hong

Huang

Chung³

et al. 2021

Crystals

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In this paper, we demonstrate the design and fabrication of a high-power, high-speed flip-chip vertical cavity surface emitting laser (VCSEL) for light detection and ranging (LiDAR) systems. The optoelectronic characteristics and modulation speeds of vertical and flip-chip VCSELs were investigated numerically and experimentally. The thermal transport properties of the two samples were also numerically investigated. The measured maximum output power, slope efficiency (SE) and power conversion efficiency (PCE) of a fabricated flip-chip VCSEL array operated at room-temperature were 6.2 W, 1.11 W/A and 46.1%, respectively. The measured L-I-V curves demonstrated that the flip-chip architecture offers better thermal characteristics than the conventional vertical structure, especially for high-temperature operation. The rise time of the flip-chip VCSEL array was 218.5 ps, and the architecture of the flip-chip VCSEL with tunnel junction was chosen to accommodate the application of long-range LiDAR. The calculated PCE of such a flip-chip VCSEL was further improved from 51% to 57.8%. The device design concept and forecasting laser characteristics are suitable for LiDAR systems.

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Design of High Peak Power Pulsed Laser Diode Driver

Liu

Tang

et al. 2022

Photonics

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This paper attempts to describe a laser diode driver circuit using the depletion mode gallium nitride high electron mobility transistor (D-mode GaN HEMT) to generate nanosecond pulses at a repetition rate up to 10 MHz from the vertical-cavity surface-emitting laser (VCSEL). The feature of this driver circuit is a large instantaneous laser power output designed in the most efficient way. The design specifications include a pulse duration between 10 ns and 100 ns and a peak power up to above 100 W. The pulsed laser diode driver uses the D-mode GaN HEMT, which has very small Coss difference between turn-on and turn-off states. The analysis is according to a laser diode model that is adjusted to match the VCSEL, made in National Yang Ming Chiao Tung University (NYCU). A design guide is summarized from the derivations and analysis of the proposed laser diode driver. According to the design guide, we selected the capacitor, resistor, and diode components to achieve 10 ns to 100 ns pulse duration for laser lighting. The experiment demonstrated that the maximum power-to-light efficiency can be as high as 86% and the maximum peak power can be 150 W, which matches the specifications of certain applications such as light detection and ranging (LiDAR).

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Power Efficient Current Driver Based on Negative Boosting for High-Speed Lasers

Cited by 3 publications

References 15 publications

Compact Laser Driver for Ultrasonic Arbitrary Position and Width Pulse Sequences Generation

Compact Laser Driver for Ultrasonic Arbitrary Position and Width Pulse Sequences Generation

High-Speed and High-Power 940 nm Flip-Chip VCSEL Array for LiDAR Application

Design of High Peak Power Pulsed Laser Diode Driver

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