Power GaN FET boards thermal and electromagnetic optimization by FE modeling

2022

Circuit Theory & Apps

In this study, a gallium nitride (GaN)‐based current linear regulator (GBCLR) was developed and implemented to control 450 nm laser diodes, and the laser beams could be concentrated by the fiber optic cable. The GBCLR consisted of a GaN high‐electron‐mobility transistor (HEMT) and wide‐bandwidth operational amplifiers. When using the GBCLR, the driving current of the laser diode can be operated in either continuous constant‐current mode for a continuous‐wave laser or pulse‐width modulation mode to achieve a short‐pulsed time laser. In the high‐frequency pulse‐width modulation mode of the GBCLR, the parasitic elements of the GaN HEMT, laser diodes, and printed circuit board must be evaluated because they can cause the gate–source voltage to overshoot and influence the laser operating current; however, few studies have analyzed these phenomena. This study adopted the complex equivalent circuits of the GaN HEMT and laser diode to establish a complete GBCLR simulation schematic with the same physical configurations and packages; thus, the GBCLR simulation circuit was able to obtain the critical simulation waveform, and the unknown parasitic element parameters could be inferred for the GBCLR design. However, the complete equivalent circuit of the GBCLR was quite complex; therefore, this study proposed a new simplified model and method to demonstrate that this method was practicable. Finally, a GBCLR prototype was developed, and the critical experimental waveforms were measured to verify the simulations and analyses.

Section: Complex Equivalent Circuit Of Gan Hemtmentioning

confidence: 99%

“…The physical configuration is depicted in Figure 6A. The GS61004B device was composed of contact pads, bottom‐side of the device package, source, gate, drain electrodes, p ‐GaN contact, AlGaN buffer layer, 2DEG channel, GaN buffer layer, Si substrate, and substrate 28–31 …”

Section: Complex Equivalent Circuitmentioning

confidence: 99%

Employing simplified resistance–inductance–capacitance equivalent circuits to analyze and confirm a gallium nitride‐based current linear regulator for laser diode controls

2022

Circuit Theory & Apps

“…This device is composed of a contact pad, bottom-side of the chip package, source, gate, drain, source electrodes, p-GaN contact, AlGaN buffer layer, 2DEG channel, GaN buffer layer, Si substrate, and substrate. [21][22][23][24] The equivalent circuit model of the GaN HEMT included intrinsic and extrinsic elements, [25][26][27][28] as shown in Figure 2B. The intrinsic elements included the capacitance C ds , resistances R gs and R ds , and dependent current source g m v cgs ; g m was the transconductance and v cgs was the across voltage on C gs .…”

Section: Equivalent Circuit Model Of Laser Diodementioning

confidence: 99%

Simulation and implementation of a two‐mode‐operation transconductance regulator with a Gallium Nitride High‐Electron‐Mobility Transistor

Lin

2021

Circuit Theory & Apps

A GaN high‐electron‐mobility transistor (HEMT) with a wide‐bandwidth operational amplifier was employed to implement and develop a two‐mode‐operation transconductance regulator (TMOTR). Using the proposed TMOTR, the laser diode can be operated in either the continuous constant‐current mode to fulfill a continuous‐wave laser or pulse‐width modulation (PWM) to achieve a narrow‐pulsed laser. When the laser diode is operated in PWM mode and at high frequency, the parasitic elements of the GaN HEMT, laser diodes, printed circuit board, and power wires must be considered, because these parasitic elements can influence the rising‐edge slope of the laser diode driving current resulting in narrow‐pulsed duty cycle diminution. This study applied equivalent circuit models of a GaN HEMT and laser diode to determine the parasitic parameters in accordance with device packages; therefore, the simulation circuit of the TMOTR with its parasitic element could be implemented to obtain the critical simulation waveform. The parasitic element parameters of the laser diode and GaN HEMT were calculated in detail and used simulation software to verify the TMOTR's characteristics. Finally, the TMOTR prototype was implemented, and the experimental waveforms were measured to confirm simulations, equivalent circuits, and dynamic responses; the GaN HEMT and MOSFET were experimented to compare their differences.

“…Figure 3a illustrates the physical package configuration, and Figure 3b is the GaN HEMT equivalent circuit. The electrical components included a substrate, Si substrate, GaN buffer layer, two-dimensional electron gas channel, AlGaN buffer layer, p-GaN contact, gate, drain, source electrodes, the bottom of the chip package, and contact pads [22,23]. The equivalent circuit of the GaN HEMT had intrinsic and extrinsic parts, as shown in Figure 3b [ [24][25][26][27].…”

Section: Gan Hemtmentioning

confidence: 99%

Equivalent Circuit Establishments of a GaN High-Electron-Mobility Transistor and 635 nm Laser Diode for a Short-Pulsed Rising Current Simulation

Lin

2021

Processes

In this paper, a dynamic operational linear regulator (DOLR) based on a GaN high-electron-mobility transistor (HEMT) and wide-bandwidth operational amplifier was developed and implemented. The driving current could be regulated and controlled by the DOLR for 632 nm laser diodes. The constant-current mode for the continuous-wave laser and the pulse-width modulation (PWM) mode for the short-pulsed laser were realizable using this DOLR. This study focused on the rising-edge time change on the laser driving current when the DOLR was operated under the high-frequency PWM mode, because the parasitic components on the GaN HEMT, laser diodes, printed circuit board, and power wires could influence the current’s dynamic behavior. Therefore, the equivalent circuit models of the laser diode and GaN HEMT were applied to establish a DOLR simulation circuit in order to observe the rising-edge time change on the laser driving current. A DOLR prototype was achieved, and so experimental waveform measurements could be implemented to verify the DOLR simulation and operation.