727 / I Fig. 4. Variation of interaction for a sample without and with overcoating by S i 0 thin film. device and was 145 pmho. By overcoating Si0 thin film at the sub strate temperature of about 30O0C, the oh of InSb thin f i i decreased to 93 pmho and the gain was improved.The sample without overcoating by Si0 thin film in Fig. 4 has a very mall value of oh = 8.7 pmho, and indicates only interaction between a hole carrier and the elastic surface wave. The oh increases in 16.5 pmho by overcoating Si0 thin f h at around 95"C, and the device shows interaction between an electron carrier and surface wave.In conclusion, we have shown that the effect of overcoating Si0 thin tilms at various temperatures can be useful in producing monolithic elastic surface-wave amplifiers, although we cannot yet fully explain this phenomenon physically.
REFERENCES
L.A. Coldren and G. S. Kino, Appl. Phys. Lett., vol. 18, no. 8 , k. Yamanouchi, K. Abe, and K. Shibayama, in I973 Proc. 5th Znt. Cons Solid Stare Devices; J. Japan Soc. AppL Phys., SuppL, vol.