Power losses comparison between Silicon Carbide and Silicon devices for an isolated DC-DC converter

Abstract

In recent years, new efficient power devices have been implemented; in particular, Silicon Carbide (SiC) devices have advantages as regards their electrical characteristics, such as very low power losses, low gate charge, low capacitances, a low on-state resistance and many others, when compared to the Silicon (Si) devices; these devices can operate at high switching frequency and high voltages; with reference to their thermal characteristics, thanks to their great thermal conductivity, high power can be obtained and, because of their wide bandgap, high temperature can be reached; for these reasons, these devices are utilized in a wide range of technological applications, including power electronics. In this paper, power losses in Si and SiC devices are evaluated in simulation and compared to each other; in order to demonstrate the remarkable advantages of the SiC devices over the silicon ones, a study which makes use of an isolated DC-DC converter is proposed in this paper. As regards the proposed full-bridge converter, SiC and silicon MOSFETs and diodes, of whom some static and dynamic parameters are compared, are used in order to transfer power from a DC voltage supply to a load.

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