Optical tunability and repeatability are essential in fabricating optoelectronic devices from waveguides to Bragg gratings (BGs) for high-energy, high-power, mode-locking, and sensing applications. For this purpose, a controlled adjustment in the optical properties, including the refractive index of the deposited nanolayers, becomes critical. This study reveals that silicon oxynitride (SiON) doping into silicon (Si) offers a new way for the preparation of novel Si-based devices with an emphasis on the BGs for filtering a particular portion of an electromagnetic spectrum, including the wavelengths of 800, 976, 1550, and 1840 nm. Control on the incident angle dependence of the BGs is demonstrated at Watt-level for the wavelength of 976 nm. Amorphous SiON-doped Si layers on alternating SiO 2 can be synthesized on bulk substrates and different optical fibers at relatively low temperatures with wide and narrow bandwidths. The high reflectivity of the novel Si-based BGs reveals over −22 dB reflection using typical optical fibers, including standardsingle-mode fibers and high-birefringent polarization-maintaining (PM) fibers. The polarized transmission measurement over the BG on the PMfiber shows the BGs do not deteriorate the PM properties, strongly yielding a beat length of 1.68 mm and birefringence of 9.2 × 10 −4 at the telecom C band.