Power-up control techniques for reliable SRAM PUF

Lee, Juyun; Jee, Dong-Woo; Jeon, D.

doi:10.1587/elex.16.20190296

Cited by 6 publications

(3 citation statements)

References 32 publications

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“…SRAM PUF has been shown to be reliable at various voltage levels, with a minimum voltage of 1.8V and a maximum voltage of 5.5V. However, the reliability decreases as the voltage decreases, with a higher failure rate observed at lower voltages [20,21].…”

Section: Voltagementioning

confidence: 99%

Accelerated Aging Effects on SRAM PUF reliability at various Temperature and Voltage conditions

Singh,

Bhatta,

Rahman

et al. 2023

Preprint

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This paper thoroughly investigates the trustworthiness of Static Random-Access Memory (SRAM) Physical Unclonable Functions (PUFs) within hardware security. It presents an overview of SRAM PUFs, their significance in hardware security, and their essential features. The paper explores the realms of evaluation metrics and practical examination of SRAM cell start-up values concerning an 8-bit SRAM dataset. Concurrently, it navigates the encountered challenges. A comprehensive pattern analysis of SRAM cell stability is discussed with accelerated aging. Compared the outputs at multiple trials to authenticate the result. The complex interplay of factors that affect the dependability of SRAM PUFs, encompassing environmental conditions, the accumulation of aging effects, and the complex landscape of process variations, is carefully explained and clarified. The paper concludes by summarizing key findings, emphasizing the importance of reliable hardware security, and suggesting future research directions for enhancing SRAM PUF reliability.

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Section: Voltagementioning

confidence: 99%

Accelerated Aging Effects on SRAM PUF reliability at various Temperature and Voltage conditions

Singh,

Bhatta,

Rahman

et al. 2023

Preprint

View full text Add to dashboard Cite

show abstract

“…On the other hand, there always exist some cells in which |∆V th | is very small ( V th,p1 ≈ V th,p2 ); these are called noisy (weak) cells [24,25]. The power-on values of such cells are easy to flip between any two power-on measurements due to inevitable environmental noise.…”

Section: Introductionmentioning

confidence: 99%

Improved Performance of SRAM-Based True Random Number Generator by Leveraging Irradiation Exposure

Zhang

Jiang

Dai

et al. 2020

Sensors

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Encryption is an important step for secure data transmission, and a true random number generator (TRNG) is a key building block in many encryption algorithms. Static random-access memory (SRAM) chips can be easily available sources of true random numbers, benefiting from noisy SRAM cells whose start-up values flip between different power-on cycles. Embarking from this phenomenon, a novel performance (i.e., randomness and throughput) improvement method of SRAM-based TRNG is proposed, and its implementation can be divided into two phases: irradiation exposure and hardware postprocessing. As the randomness of original SRAM power-on values is fairly low, ionization irradiation is utilized to enhance its randomness, and the min-entropy can increase from about 0.03 to above 0.7 in the total ionizing irradiation (TID) experiments. Additionally, while the data remanence effect hampers obtaining random bitstreams with high speed, the ionization irradiation can also weaken this impact and improve the throughput of TRNG. In the hardware postprocessing stage, Secure Hash Algorithm 256 (SHA-256) is implemented on a Field Programmable Gate Array (FPGA) with clock frequency of 200 MHz. It can generate National Institute of Standards and Technology (NIST) SP 800-22 compatible true random bitstreams with throughput of 178 Mbps utilizing SRAM chip with 1 Mbit memory capacity. Furthermore, according to different application scenarios, the throughput can be widely scalable by adjusting clock frequency and SRAM memory capacity, which makes the novel TRNG design applicable for various Internet of Things (IOT) devices.

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“…PUFs with limited number of CRPs, known as Weak PUFs, are commonly used for key generation in cryptographic functions [3,4]. Memory-based PUF, like SRAM PUF [5], butterfly PUF [6] is one kind of Weak PUF. It uses asymmetry caused by manufacturing process deviation between the cross-coupling gate devices in most memory cells to produce responses.…”

Section: Introductionmentioning

confidence: 99%

A lightweight and secure-enhanced Strong PUF design on FPGA

Hou

Guo

et al. 2019

IEICE Electron. Express

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Physical unclonable function (PUF) is a reliable physical security primitive. The Weak PUF and Strong PUF are two well-known PUF topologies. Strong PUF can be used to authenticate and protect intellectual property on FPGA chips. Classic PUF designs, like arbiter PUF, are hard to implement on FPGA and severely threatened by the machine learning based modeling attacks. In this work, we propose a new Strong PUF on FPGA by combining Weak PUF with obfuscation logic. Experiment results on a 28nm FPGA show that the resistance to modeling attack is good and the hardware overhead is small.

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Power-up control techniques for reliable SRAM PUF

Cited by 6 publications

References 32 publications

Accelerated Aging Effects on SRAM PUF reliability at various Temperature and Voltage conditions

Accelerated Aging Effects on SRAM PUF reliability at various Temperature and Voltage conditions

Improved Performance of SRAM-Based True Random Number Generator by Leveraging Irradiation Exposure

A lightweight and secure-enhanced Strong PUF design on FPGA

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