Powerful InAsSbP/InAsSb light emitting diodes grown by MOVPE

Kizhayev, S. S.; Zotova, N. V.; Molchanov, S. S.; Pushnyi, B. V.; Yakovlev, Yu. P.

doi:10.1016/s0022-0248(02)01830-4

Cited by 7 publications

(5 citation statements)

References 14 publications

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“…The output power only drops by 30%-40% at temperatures as high as 80 °C. Since most LEDs in this wavelength range up to now are working only pulsed or quasi-CW [72][73][74][75], these InP-based RC-LEDs mark a clear progress in LED performance for the MIR. However, LEDs in the MIR particularly suffer from the increase in non-radiative recombination (manly Auger recombination) for long wavelength.…”

Section: Inp-based Light Sourcesmentioning

confidence: 99%

Novel InP- and GaSb-based light sources for the near to far infrared

Sprengel

Demmerle

Markus-Christian

2016

Semicond. Sci. Technol.

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This topical review presents an overview on novel concepts for light emitting diodes (LEDs) and lasers for the near infrared to the THz regime. GaSb-based quantum well lasers are shown to be a promising concept for laser from the near to mid infrared. The GaSb-based edge-emitting lasers offer low thresholds for wavelengths ranging from about 2 to 3.7 μm. However, the development of vertical-cavity surface-emitting lasers and other advanced laser concepts is lagging behind due to material issues and complicated process technology. InP-based type-II quantum wells are an innovative concept for sources emitting in the wavelength range from 2 to 4 μm. This concept combines extended long wavelength emission with the reliable process technology of the already well-established InP-based lasers. Based on this, we present LEDs up to 3.5 μm wavelength, surface emitting lasers at 2.5 μm wavelength and edge emitting lasers up to 2.7 μm. For longer wavelengths, the so-called GaSb-and InAs-based interband cascade lasers can be used operating up to about 7 μm. The mid infrared range between 3 and 20 μm is also covered by quantum cascade lasers (QCL), which are dominating especially in the longer wavelength range above 7 μm. The far infrared reaching to the THz regime is exclusively covered by QCL. While for decades the only available semiconductor laser source for the far infrared and THz range was the direct THz QCL, recent progress demonstrated THz emission in nonlinear mid infrared QCLs. These devices are emitting THz by a nonlinear frequency conversion process, which allows operation at room temperature and beyond. Tunable THz lasers were demonstrated using both monolithic tuning mechanisms and an external cavity approach.

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Section: Inp-based Light Sourcesmentioning

confidence: 99%

Novel InP- and GaSb-based light sources for the near to far infrared

Sprengel

Demmerle

Markus-Christian

2016

Semicond. Sci. Technol.

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“…Ширина запрещенной зоны тройного твердого раствора в системе In−As−Sb при комнатной температуре может изменяться в интервале энергий 0.35−0.1 eV в зависимости от концентрации сурьмы в твердой фазе [1]. Таким образом, эпитаксиальные слои на основе данных твердых растворов могут быть использованы для создания активных областей в светоизлучающих приборах, работающих в среднем инфракрасном диапазоне длин волн от 3.5 µm до 12 µm [2]. При этом ограничивающими барьерами, с помощью которых можно локализовать носители заряда в узкозонной активной области, как правило, выступают слои четверных твердых растворов InAsSbP [3,4].…”

Section: Introductionunclassified

Узкозонные гетероструктуры InAs-=SUB=-1-y-=/SUB=-Sb-=SUB=-y-=/SUB=-/InAsSbP (y=0.09-0.16) для спектрального диапазона 4-6 μm, полученные методом МОГФЭ

Romanov¹,

Иванов²,

Moiseev³

2019

Физика Твердого Тела

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Asymmetric n -InAs/InAs_(1 – _ y )Sb_ y / p -InAsSbP heterostructures with a narrow-gap active layer and a composition range y = 0.09–0.16 were grown by vapor phase epitaxy from metalorganic compounds. Room-temperature electroluminescence was observed at a wavelength of up to λ = 5.1 μm at a spectral maximum. The study of low-temperature electroluminescence spectra provided the possibility to establish the existence of two radiative recombination channels caused by the nature of the InAsSb/InAsSbP heterointerface. The effect produced by the chemistry of the active layer on the composition of the grown barrier layer and the formation of the InAsSb/InAsSbP heterojunction with an increase in the antimony content in the InAsSb solid solution was demonstrated.

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“…But these devices are in general operated only in pulsed mode. 3,4 Furthermore, since the processing and growth technology is by far not so well developed as compared to InP-based material and the substrate quality and physical properties like thermal conductivity are inferior, much effort has been taken to shift the accessible emission of InP-based material systems. As strain constraints limit the classical type-I quantum well (QW) approach to around 2.3 lm wavelength, 5 alternative concepts like metamorphic buffers, which create a "virtual substrate" with larger lattice constant than InP, or type-II QWs, where smaller transition energies than the band gap are possible, have recently been developed.…”

mentioning

confidence: 99%

“…16 Nevertheless, the performance of both LEDs at 80 C yields an output reduction of only 30%-40% corresponding to a À0.8 lW/K maximum power drop at continuous wave operation and is, therefore, already beating GaSb-and InAs-based LEDs in terms of temperature stability. 3,4 Furthermore, it is important to note that the output power in continuous wave operation at room-temperature clearly exceeds that of commercially available MIR-LEDs (e.g., "Roithner LaserTechnik" company). InAs-based LEDs emit around 100 lW at comparable currents below 400 mA and only in pulsed mode with 50% duty cycle.…”

mentioning

confidence: 99%

“…Furthermore, the achieved cw output power and temperature stability clearly outperform standard InAs-or GaSb-based LEDs, since these devices are restricted to pulsed or quasi-continuous operation. 3,4,17,18 However, further investigation of the recombination mechanisms and evaluation of the recombination parameters are at first necessary to enhance the performance and to further investigate the drooping emission power. Also, a study of the dependency between QW periods and output power at constant emission wavelength and structure design could provide important information about the well filling and possible carrier leakage.…”

mentioning

confidence: 99%

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