Pr3Si6N11/Si3N4 Stacked High-k Gate Dielectrics with High Quality Ultrathin Si3N4 Interfacial Layers

Teramoto, Akinobu; Teramoto, Akinobu; Ohmi, Tadahiro

doi:10.1149/ma2011-01/16/1142

Meet. Abstr.

2011

DOI: 10.1149/ma2011-01/16/1142

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Pr₃Si₆N₁₁/Si₃N₄ Stacked High-k Gate Dielectrics with High Quality Ultrathin Si₃N₄ Interfacial Layers

Akinobu Teramoto,

Tadahiro Ohmi

Abstract: not Available.

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Pr₃Si₆N₁₁/Si₃N₄ Stacked High-k Gate Dielectrics with High Quality Ultrathin Si₃N₄ Interfacial Layers

Abstract: not Available.

Cited by 0 publications

References 3 publications

No citations

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