Practical DUV lithography for the optoelectronics market

Harris, Paul D.; McCallum, Martin; Muir, David; Hughes, Gordon; Pinkney, S

doi:10.1117/12.482810

Cited by 3 publications

(1 citation statement)

References 3 publications

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“…Validation of the 193 nm immersion scanner at IMEC's 300 mm wafer fab facility in Leuven, Belgium, is a clear milestone towards ensuring the availability of a cost-effective technology at 65 nm and may even be extended to the 45 nm node for microelectronics. Many publications have been presented concerning this technological development, of which only a few to name are [17][18][19][20][21]. The development consists of the definition of a suitable light source, optics, and other hardware aspects of such a lithographic system, e.g.…”

Section: Emerging Lithographic Technologies In Industrymentioning

confidence: 99%

Massively parallel fabrication of repetitive nanostructures: nanolithography for nanoarrays

Lüttge¹

2009

J. Phys. D: Appl. Phys.

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This topical review provides an overview of nanolithographic techniques for nanoarrays. Using patterning techniques such as lithography, normally we aim for a higher order architecture similarly to functional systems in nature. Inspired by the wealth of complexity in nature, these architectures are translated into technical devices, for example, found in integrated circuitry or other systems in which structural elements work as discrete building blocks in microdevices. Ordered artificial nanostructures (arrays of pillars, holes and wires) have shown particular properties and bring about the opportunity to modify and tune the device operation. Moreover, these nanostructures deliver new applications, for example, the nanoscale control of spin direction within a nanomagnet. Subsequently, we can look for applications where this unique property of the smallest manufactured element is repetitively used such as, for example with respect to spin, in nanopatterned magnetic media for data storage. These nanostructures are generally called nanoarrays. Most of these applications require massively parallel produced nanopatterns which can be directly realized by laser interference (areas up to 4 cm2 are easily achieved with a Lloyd's mirror set-up). In this topical review we will further highlight the application of laser interference as a tool for nanofabrication, its limitations and ultimate advantages towards a variety of devices including nanostructuring for photonic crystal devices, high resolution patterned media and surface modifications of medical implants. The unique properties of nanostructured surfaces have also found applications in biomedical nanoarrays used either for diagnostic or functional assays including catalytic reactions on chip. Bio-inspired templated nanoarrays will be presented in perspective to other massively parallel nanolithography techniques currently discussed in the scientific literature.

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Section: Emerging Lithographic Technologies In Industrymentioning

confidence: 99%

Massively parallel fabrication of repetitive nanostructures: nanolithography for nanoarrays

Lüttge¹

2009

J. Phys. D: Appl. Phys.

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Basic technologies for microsystems

Lüttge¹

2016

Nano- And Microfabrication for Industrial and Biomedical Applications

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Si metasurface half-wave plates demonstrated on a 12-inch CMOS platform

Dong

et al. 2019

Nanophotonics

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Half-wave plate (HWP) is one of the key polarization controlling devices in optical systems. The conventional HWPs based on birefringent crystals are inherently bulky and difficult to be monolithically integrated with other optical components. In this work, metasurface-based HWPs with high compactness are demonstrated on a 12-inch silicon complementary metal-oxide-semiconductor platform. Three-dimensional finite difference time domain simulation is used to design the nanostructure and investigate the impact of fabrication process variation on the device performance. In addition, the cross- and co-polarization transmittance (Tcross and Tco) of the HWPs located at different wafer locations are characterized experimentally. The peak Tcross and valley Tco values of 0.69 ± 0.053 and 0.032 ± 0.005 are realized at the wavelength around 1.7 μm, respectively. This corresponds to a polarization conversion efficiency of 95.6% ± 0.8%.

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Practical DUV lithography for the optoelectronics market

Cited by 3 publications

References 3 publications

Massively parallel fabrication of repetitive nanostructures: nanolithography for nanoarrays

Massively parallel fabrication of repetitive nanostructures: nanolithography for nanoarrays

Basic technologies for microsystems

Si metasurface half-wave plates demonstrated on a 12-inch CMOS platform

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