Pre-crystallization kinetics of the Bi₁₀Se₉₀glass

Abstract

Differential scanning calorimetry (DSC) results of Bi10 Se90 glass under non-isothermal conditions are reported. In the present work, the analyses have been focused on the endothermic peaks of the DSC curves. The models, used for calculation of the crystallization kinetics from the exothermic peaks, have been applied to obtain the pre-crystallization kinetics from the endothermic peaks. The activation energy of glass transition (Eg ), the Avrami index (n ) and the frequency factor (K 0 ) of the investigated glass are 186±0.2 kJ mol-1 , 2.08 and 2.5 × 1028 s-1 , respectively. The values obtained can be related to the kinetics of amorphous-crystalline transformations.

Determination of the crystallization kinetic parameters of Ge22.5Te77.5 glass using model-free and model-fitting methods

“…The study of crystallization kinetics using the diffraction scanning calorimetry, DSC, methods has been widely discussed in the literatures [22][23][24][25][26][27][28]. Thermally activated transformations in the solid state can be investigated by isothermal or non-isothermal experiments [25][26][27][28][29][30][31].…”

“…Thermally activated transformations in the solid state can be investigated by isothermal or non-isothermal experiments [25][26][27][28][29][30][31]. The crystallization processes in the chalcogenide glasses are generally studied by non-isothermal analysis, because of the great development of the calorimetric techniques and the simplicity of performing the experiments performed.…”

Evaluation of Kinetic Parameters and Thermal Stability of Melt-Quenched BixSe100-xAlloys (x ≤7.5 at%) by Non-Isothermal Thermogravimetric Analysis

“…Improving resolution of non-isothermal TG measurements and separating possible thermal processes can be realized via long experimental runs at slow heating rates (2°C/min~30°C/ min), so the time at any T must be long enough to permit completeness of a kinetic reaction, by reducing sample's size (5~30 mg), hence minimizing temperature gradients and inhomogeneities across it, and by choosing a suitable purge gas during TG measurements. As regards to kinetic analysis of experimental thermoanalytical data, two main approaches are realized: the modelfree and model-based analysis methods, both demand a set of accurate isothermal or non-isothermal measurements at different conditions, such as the sample's temperature T and the heating rate β (Abdel- Rahim et al, 2008;Abu ElOyoun, 2000;Achar et al, 1966;Atmani, 1988;Brown, 2004;Coat & Redfern, 1964;Flynn & Wall, 1966;Jones et al, 1975;Keattch & Dollimore, 1975;Marini et al, 1979;Moharram & Abu El-Oyoun, 2000;Moukhina, 2012;Ozawa, 1965;Ptáček et al, 2010;Šesták, 1984;Sharp & Wentworth, 1969;Sharp et al, 1966). The model-based kinetic (discrimination) analysis solves an equation (Eq.)…”

“…A practical approach that may enhance photosensitivity of α-Se to long-wavelength light, besides reducing its ageing features, improving its thermal stability and reforming its structure for use in various technical applications, is to alloy it with the other chalcogens (tellurium [Te] or sulfur [S]) and/ or with metallic/non-metallic elements to form binary (or ternary) Se-based chalcogenide glasses (Kasap & Rowlands, 2000;Kotkata et al, 2009;Mehra et al, 1993;Mehta, 2006;Mott & Davis, 1979;Saxena & Bhatnagar, 2003). Among the materials which have been alloyed with Se, metallic Bi has peculiar significant influence upon optical, electrical and thermal characteristics of the α-Se semiconductor, with glassy, homogeneous chalcogenide Bi x Se 100-x composites of small Bicontents (x<10 at%) are still electrically resistive, besides their favorably physical properties that are expedient for many applications of technological curiosity, especially when these Bi x Se 100-x chalcogenides are used to produce thin/thick films for photovoltaic systems and memory devices (Abdel-Rahim et al, 2008;Ahmad, 2016;Atmani, 1992Atmani, , 1988Hafiz et al, 2001;Moharram & Abu El-Oyoun, 2000;Tichy et al, 1985). A few number of studies related to glass formation, crystallization behavior and melting characteristics of meltquenched Bi x Se 100-x ingots (Abdel-Rahim et al, 2008;Moharram & Abu El-Oyoun, 2000) and of flash-evaporated Bi x Se 100-x layers (Atmani, 1988; have been conducted by the differential scanning calorimetry (DSC) and differential thermal analysis (DTA) techniques (Brown, 2004).…”

“…Among the materials which have been alloyed with Se, metallic Bi has peculiar significant influence upon optical, electrical and thermal characteristics of the α-Se semiconductor, with glassy, homogeneous chalcogenide Bi x Se 100-x composites of small Bicontents (x<10 at%) are still electrically resistive, besides their favorably physical properties that are expedient for many applications of technological curiosity, especially when these Bi x Se 100-x chalcogenides are used to produce thin/thick films for photovoltaic systems and memory devices (Abdel-Rahim et al, 2008;Ahmad, 2016;Atmani, 1992Atmani, , 1988Hafiz et al, 2001;Moharram & Abu El-Oyoun, 2000;Tichy et al, 1985). A few number of studies related to glass formation, crystallization behavior and melting characteristics of meltquenched Bi x Se 100-x ingots (Abdel-Rahim et al, 2008;Moharram & Abu El-Oyoun, 2000) and of flash-evaporated Bi x Se 100-x layers (Atmani, 1988; have been conducted by the differential scanning calorimetry (DSC) and differential thermal analysis (DTA) techniques (Brown, 2004). Not much work is reported on the stoichiometry of melt-quenched Bi x Se 100-x alloys or on their thermogravimetric (TG) behavior, in particular (Ahmad, 2016).…”