Pre-silicon parameter generation methodology using BSIM3 for device/circuit concurrent design

Abstract

We present a physical parameter extraction methodology for BSIM3 to generate accurate pre-silicon parameters (parameters created before device fabrication). Using this method, the parameters of the 0.20pm process device can be generated from a 0.25pm technology with 5% accuracy in a few minutes. We applied this method in optimizing the devices of our microprocessor in the early stages of design.

Circuit performance oriented device optimization using BSIM3 pre-silicon model parameters

“…Using the physically extracted base parameters of an existing device [4], the pre-silicon parameters for the process of the next generation are generated by changing some process parameters and leaving other parameters as is (Fig.2). The details are as follows,…”

“…We have proposed an accurate pre-silicon parameter generation methodology using BSIM3 [4], which uses "a physical extraction method" to make the model predictable and accurate enough to optimize the device performance of a specific device structure. The key to the physical extraction of the base parameter is to divide the parameters in "hierarchical groups" and then extract the parameters based on each physical phenomena described by BSIM3.…”

Circuit performance oriented device optimization using BSIM3 pre-silicon model parameters

“…Using the physically extracted base parameters of an existing device [4], the pre-silicon parameters for the process of the next generation are generated by changing some process parameters and leaving other parameters as is (Fig.2). The details are as follows, AC parameter generation method AC parameters for the pre-silicon parameters are calculated as follows, assuming that constant electric field scaling is done.…”