Precipitate coarsening and self organization in erbium-doped silica

Sckerl, M.W.; Guldberg-Kjær, Søren Andreas; Poulsen, Mette Erecius; Shi, Peixiong; Chevallier, J.

doi:10.1103/physrevb.59.13494

Cited by 27 publications

(17 citation statements)

References 18 publications

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“…The atomic fraction of the Er atoms in the matrix after annealing for the sample Si 4% , Si 9% and Si 16% is respectively 9 Â 10 20 at cm À3 , 4 Â 10 20 at cm À3 and 7 Â 10 20 at cm À3 . The Er content in the matrix, for all samples is above the solubility limit of Er atoms in SiO 2 estimated to 0.1 at.% (7 Â 10 19 at cm À3 ) [6]. This indicates that after annealing 1 h at 1100 + C, the thermodynamic equilibrium may not be yet reached.…”

Section: Clusters Analysismentioning

confidence: 99%

“…Moreover, the low solubility limit of Er ions in silicon oxide imposes major limitation. When Er content exceeds a critical modest concentration (10 19 at cm À3 ) [6], Er 3þ ions will precipitate through clustering or formation of compounds such as oxides [6,7]. In many cases, these precipitates are responsible of emission deterioration, limiting thereby the progress of the optical properties of the system.…”

Section: Introductionmentioning

confidence: 99%

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On the interplay between Si-Er-O segregation and erbium silicate (Er2Si2O7) formation in Er-doped SiOx thin films

Beainy

Frilay

Pareige

et al. 2018

Journal of Alloys and Compounds

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. On the interplay between Si-Er-O segregation and erbium silicate (Er 2 Si 2 O 7 ) formation in Er-doped SiO x thin films. Journal of Alloys and Compounds, Elsevier, 2018, 755, pp.55 -60 a b s t r a c tEr-doped silica or rich-silicon oxide has been widely studied as 1.54 mm emitters. The incorporation of Sinanoclusters is known for improving luminescence yield of Er 3þ ions through an efficient sensitization of the neighboring rare earth ions. The aim of this work is to investigate the influence of Silicon excess and Erbium concentration on the formation of silicon nanoclusters and Er-rich phase responsible of the quenching of 1.54 mm emission. Atom probe tomography and photoluminescence spectroscopy were used to explore the nanostructure and optical activity of Er-doped silicon rich silica. We present a direct evidence that both silicon excess and Er concentration influence the growth of Si nanoclusters, the formation of Er-Si-O phase and the luminescence of both Si nanoclusters and Er 3þ ions. We explain these finding in relation with the growth mechanism of nanoparticles and the presence of a Snowman-like Janus morphology between silicon and Erbium silicates nanoparticles. In this contribution, we deciphered the nanoscale structure spatial correlations between Er and Si atoms in Er doped SiO X which remained unclear for a long time.

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Section: Clusters Analysismentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

On the interplay between Si-Er-O segregation and erbium silicate (Er2Si2O7) formation in Er-doped SiOx thin films

Beainy

Frilay

Pareige

et al. 2018

Journal of Alloys and Compounds

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“…%. 67) On the other hand, in multi-component glasses such as soda lime silicate glass, RE ions can be uniformly dissolved into the melts. That is, phase separation needs to be suppressed in silica glass melt to have a uniform RE-doped pure SiO 2 glass.…”

Section: Local Structure Around Rare-earth Ionsmentioning

confidence: 99%

Doping effects in amorphous oxides

Funabiki

Kamiya

Hosono

2012

J. Ceram. Soc. Japan

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Impurity doping of crystalline Si is one of the most striking techniques in semiconductor technology. A rigid and perfect crystalline lattice is prerequisite for effective doping. However, it has been reported to date that introducing a small amount of impurities drastically improves also the properties of amorphous materials. This paper reviews three pronounced doping effects on optical and electrical properties of amorphous oxides; i.e., (i) F-doping of silica glass to improve the vacuum-ultraviolet optical transmission and radiation toughness, (ii) codoping effects on solubility enhancement of rare earth ions in silica glass melt, and (iii) electron-carrier generation in transparent amorphous oxide semiconductors. It is emphasized that effectiveness of electron doping is determined by the magnitude of electron affinity and stabilization energy of a dopant. Importance of the local structure formed around a dopant ion and the location of conduction band minimum measured from the vacuum level is addressed to understand the doping effects in amorphous oxides.

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“…This means that the clusters tend to reduce in density while increasing in mean size. From [34] and [35], the relation for Ostwald ripening is (3) where is the cluster diameter, is a diffusion constant dependent on temperature, and is the annealing time.…”

Section: A Results and Discussionmentioning

confidence: 99%

Molecular homogeneity in erbium-doped sol-gel waveguide amplifiers

Laliotis

Yeatman

Ahmad

et al. 2004

IEEE J. Quantum Electron.

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Abstract-High net gain levels have recently been reported in silica-on-silicon waveguide amplifiers, using the sol-gel method of glass deposition. Spectroscopic measurements indicate that high inversion levels are achieved at high erbium concentrations, suggesting a high uniformity in the erbium distribution. Here we show that high inversion and low scattering losses are only achieved in sol-gel waveguides which have had restricted heat treatment and that both degrade upon additional annealing. Evolution of scattering loss spectra are presented, and these are included in a model of the ytterbium-sensitized waveguide amplifiers to show that the gain reduction with heat treatment is not wholly due to pump and signal excess losses, but also to changes in the spectroscopic properties of the erbium ions. In particular, the formation of clusters in which inversion is rapidly quenched is indicated. Thus, we show that the superior performance of the sol-gel method for rare-earth doping of silica waveguides, for amplifier and laser applications, results from its ability to form homogenous molecular structures which are meta-stable and which consequently cannot be formed in glasses that require high-temperature consolidation or annealing.

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Precipitate coarsening and self organization in erbium-doped silica

Cited by 27 publications

References 18 publications

On the interplay between Si-Er-O segregation and erbium silicate (Er2Si2O7) formation in Er-doped SiOx thin films

On the interplay between Si-Er-O segregation and erbium silicate (Er2Si2O7) formation in Er-doped SiOx thin films

Doping effects in amorphous oxides

Molecular homogeneity in erbium-doped sol-gel waveguide amplifiers

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