Precise and Simple Methods for Detection of Initial Defects in 1.2 nm Gate Dielectrics Based on Nonlinear Conductions

Suto, Hitoshi; Muratomi, T.; Ebihara, K.; Kanno, Masayoshi; Gocho, T.; Nishida, Naoki

doi:10.1109/relphy.2006.251192

Cited by 2 publications

(2 citation statements)

References 53 publications

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“…Finally, we note that a close similarity has been observed in the breakdown characteristics of certain process-induced ("extrinsic") and wear-out induced failures 74 . A simple method to detect processinduced defects has recently been described by Suto 75 .…”

Section: Macroscopic Process-induced Defectsmentioning

confidence: 99%

The Influence of Defects and Impurities on Electrical Properties of High-k Dielectrics

Dąbrowski¹,

Miyazaki

Inumiya

et al. 2008

MSF

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Electrical properties of thin high-k dielectric films are influenced (or even governed) by the presence of macroscopic, microscopic and atomic-size defects. For most applications, a structurally perfect dielectric material with moderate parameters would have sufficiently low leakage and sufficiently long lifetime. But defects open new paths for carrier transport, increasing the currents by orders of magnitude, causing instabilities due to charge trapping, and promoting the formation of defects responsible for electrical breakdown events and for the failure of the film. We discuss how currents flow across the gate stack and how damage is created in the material. We also illustrate the contemporary basic knowledge on hazardous defects (including certain impurities) in high-k dielectrics using the example of a family of materials based on Pr oxides. As an example of the influence of stoichiometry on the electrical pa-rameters of the dielectric, we analyze the effect of nitrogen incorporation into ultrathin Hf silicate films.

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Section: Macroscopic Process-induced Defectsmentioning

confidence: 99%

The Influence of Defects and Impurities on Electrical Properties of High-k Dielectrics

Dąbrowski¹,

Miyazaki

Inumiya

et al. 2008

MSF

View full text Add to dashboard Cite

show abstract

“…32,33) Furthermore, it is difficult to detect the extrinsic defects, if any exist, because the excessive leakage current caused by the breakdown is possibly masked by the current that flows through the intrinsic portion of the test structures. 34) All these results seem to have distracted the reliability engineers' concern from the extrinsic defects.…”

Section: Introductionmentioning

confidence: 99%

Atomic Layer Control for Suppressing Extrinsic Defects in Ultrathin SiON Gate Insulator of Advanced Complementary Metal–Oxide–Semiconductor Field-Effect Transistors

Shimamoto

Kawashima

Kikuchi

et al. 2010

Jpn. J. Appl. Phys.

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By measuring the minimum supply voltage for normal operation of test random access memories, we detected low-density extrinsic defects in silicon-oxynitride (SiON) gate insulators that were formed by state-of-the-art technologies. The density of the detected defects had a strong correlation with optical thickness d opt, which was ellipsometrically measured, regardless of the processing conditions of the SiON films. We propose to maintain the d opt above a threshold value of 1.7 nm to suppress the problems caused by the defects. The optimization of post nitridation annealing (PNA) condition is promising for meeting the criterion without sacrificing device performance. By elaborate investigations based on the Clausius–Mosotti relation, we found that the optical thickness of SiON films is approximately proportional to the atomic area density in the films. On the basis of this finding, we developed a model, which is an extension of the conventional analytical cell-based model, to figure out the physical process of the extrinsic-defect formation. The results analyzed using the model revealed that the extrinsic defects are formed in the SiON films in the case when the number of normal cells in a vertical arrangement becomes equal to or smaller than the threshold value of 3 or 4.

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Precise and Simple Methods for Detection of Initial Defects in 1.2 nm Gate Dielectrics Based on Nonlinear Conductions

Cited by 2 publications

References 53 publications

The Influence of Defects and Impurities on Electrical Properties of High-k Dielectrics

The Influence of Defects and Impurities on Electrical Properties of High-k Dielectrics

Atomic Layer Control for Suppressing Extrinsic Defects in Ultrathin SiON Gate Insulator of Advanced Complementary Metal–Oxide–Semiconductor Field-Effect Transistors

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