2016
DOI: 10.1016/j.proche.2016.07.016
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Precise Control of Metal Oxide Thin Films Deposition in Magnetron Sputtering Plasmas for High Performance Sensing Devices Fabrication

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Cited by 12 publications
(8 citation statements)
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“…Magnetron sputtering technology is a well-known method for metal oxide (MOX) thin film deposition [1,2,3,4,5]. It is widely used in research and development laboratories as well as in the industry lines.…”
Section: Introductionmentioning
confidence: 99%
“…Magnetron sputtering technology is a well-known method for metal oxide (MOX) thin film deposition [1,2,3,4,5]. It is widely used in research and development laboratories as well as in the industry lines.…”
Section: Introductionmentioning
confidence: 99%
“…Typically, inorganic dielectric materials such as SiO 2 [15,16], Ta 2 O 5 [17][18][19], ZrO 2 [20,21], ZnO [22][23][24], TiO 2 [25][26][27], and Si 3 N 4 [28][29][30] are utilized as dielectric layers due to their high electric permittivity (dielectric constant) and mechanical stability. They are deposited above a conducting layer using various deposition techniques such as anodization [18], atomic layer deposition [31], sputtering [32], electro-spraying [33], and electrochemical deposition [34]. These inorganic materials are inherently hydrophilic [35] and necessitate the addition of hydrophobic layers on top of the dielectric layer.…”
Section: Introductionmentioning
confidence: 99%
“…Because of the variations from its fabrication process, cuprous oxide (Cu2O) is a p-type semiconductor with varied optical properties. [19]. copper oxide: Cu2O and CuO, known as (cupric oxide), have been grown using a variety of techniques [18][19].…”
Section: Introductionmentioning
confidence: 99%
“…[19]. copper oxide: Cu2O and CuO, known as (cupric oxide), have been grown using a variety of techniques [18][19]. Additionally, the energy gaps for (Cu2O) molecule [6][7][8][9][10][11][12][13], as well as (CuO) molecule [10][11][12][13] films, which have been reported in literature, rely on a manufacturing procedure Energy gap values for (Cu2O) molecule range (2.10-2.60) eV [6][7][8][9][10][11][12][13], whereas CuO has been reported to have an energy gap of 1.3-2.1 eV [10,13].…”
Section: Introductionmentioning
confidence: 99%