These promising advances in device performance are attributed to successful deployment of the alloying of cation and anion mixtures and the development of engineering approaches to improve the properties of perovskite crystals and films. These include improvements to chemical homogeneity, crystal phase purity/stability, sub-bandgap (trap) states, and thin-film uniformity. [10,11] However, despite this progress, PSCs still suffer from poor stability and their efficiencies remain far from the calculated limit (33.7%). [12,13] To realize high-performance PSCs, a high-quality perovskite film, aligned energy levels and optimal interfacial properties must be present in a single device. [14,15] In particular, high-quality perovskite films are critical to extending the open-circuit-voltage (V oc ) and fill-factor (FF) upper limit of PSCs. [16] However, commonly, perovskites rapidly crystallize from solution to form thin films, and this process may be complete in few seconds, which contributes to the inhomogeneous crystallization process, therefore, compromised film quality. [17] Thus, the manner in which ions crystallize from solution and during film formation is critical to the quality of the resulting perovskite films.A typical chemical composition of MHP is ABX 3 , where A is a monovalent organic cation, such as methylammonium (MA + ) or formamidinium (FA + ), or a monovalent inorganic (metal) cation, such as cesium (Cs + ), B is a divalent metal cation, such as lead (Pb 2+ ) or tin (Sn 2+ ), and X is a halogen anion, such as iodide (I − ), bromide (Br − ), or chloride (Cl − ). [18][19][20] In addition, perovskite precursor materials must meet the requirements of