Precise determination of two-carrier transport properties in the topological insulator<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:msub><mml:mi>TlBiSe</mml:mi><mml:mn>2</mml:mn></mml:msub></mml:math>

Eguchi, G.; Kuroda, Kenta; Shirai, Kaito; Ando, Yoshinori; Shinjo, T.; Kimura, Akio; Shiraishi, Masashi

doi:10.1103/physrevb.91.235117

Cited by 12 publications

(13 citation statements)

References 19 publications

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“…Here, the spin carrier species, i.e., electrons or holes, govern the sign of the electromotive forces generated by the ISHE. Charge transport properties in a semimetal system such as Bi, where electrons and holes co-exist, can be understood from the longitudinal and transverse resistivity, and a recent relevant analysis enables obtaining further insight into the multi-carrier transport [11]. Hence, a combination of electric spin conversion and resistivity measurements enables an understanding of the physics involving a correlation between spin and charge transport in semimetals.…”

Section: Introductionmentioning

confidence: 99%

Transport and spin conversion of multicarriers in semimetal bismuth

et al. 2016

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In this paper, we report on the investigation of (1) the transport properties of multi-carriers in semi-metal Bi and (2) the spin conversion physics in this semimetal system in a ferrimagnetic insulator, yttrium-iron-garnet. Hall measurements reveal that electrons and holes co-exist in the Bi, with electrons being the dominant carrier. The results of a spin conversion experiment corroborate the results of the Hall measurement; in addition, the inverse spin Hall effect governs the spin conversion in the semimetal/insulator system. This study provides further insights into spin conversion physics in semimetal systems.

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Section: Introductionmentioning

confidence: 99%

Transport and spin conversion of multicarriers in semimetal bismuth

et al. 2016

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“…Clear nonlinear normal Hall curves are observed at low temperatures, reflecting that both electron and hole carriers contribute to the transport properties in Co 3 Sn 2 S 2 single-crystalline nanoflakes. We performed two-band [1,22,23] analyses on all measured samples. The carrier concentration of holes and electrons are both~1×10 20 cm −3 in all studied samples (details in Supporting Information Note 4), indicating a near compensation of carriers in Co 3 Sn 2 S 2 single-crystalline nanoflakes with the abovementioned different thicknesses.…”

Section: Resultsmentioning

confidence: 99%

On the anomalous low-resistance state and exceptional Hall component in hard-magnetic Weyl nanoflakes

Zeng

Shi

et al. 2021

Sci. China Phys. Mech. Astron.

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Magnetic topological materials, which combine magnetism and topology, are expected to host emerging topological states and exotic quantum phenomena. In this study, with the aid of greatly enhanced coercive fields in high-quality nanoflakes of the magnetic Weyl semimetal Co 3 Sn 2 S 2 , we investigate anomalous electronic transport properties that are difficult to reveal in bulk Co 3 Sn 2 S 2 or other magnetic materials. When the magnetization is antiparallel to the applied magnetic field, the low longitudinal resistance state occurs, which is in sharp contrast to the high resistance state for the parallel case. Meanwhile, an exceptional Hall component that can be up to three times larger than conventional anomalous Hall resistivity is also observed for transverse transport. These anomalous transport behaviors can be further understood by considering nonlinear magnetic textures and the chiral magnetic field associated with Weyl fermions, extending the longitudinal and transverse transport physics and providing novel degrees of freedom in the spintronic applications of emerging topological magnets.

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“…1b and c). The presence of high mobility electrons (the surface Dirac electrons) and low mobility (bulk) holes is evidenced from a two-carrier analysis 26,27 (Extended Data 1).…”

Section: Resultsmentioning

confidence: 99%

Boosting the surface conduction in a topological insulator

Taupin

Eguchi

Budnowski

et al. 2021

Preprint

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The protected surface conduction of topological insulators is in high demand for the next generation of electronic devices. What is needed to move forward are robust settings where topological surface currents can be controlled by simple means, ideally by the application of external stimuli. Surprisingly, this direction is only little explored and the role of topological states in such processes has remained obscure. In this work we demonstrate that we can boost the surface conduction of a topological insulator by light and/or electric field. This happens in a fully controlled way, and the additional Dirac carriers exhibit ultra-long live times. We provide a comprehensive understanding—carriers injection from the bulk to the surface states across an intrinsic Schottky barrier—and expect this mechanism to be at play in a broad range of materials and experimental settings.

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Precise determination of two-carrier transport properties in the topological insulatorTlBiSe2

Cited by 12 publications

References 19 publications

Transport and spin conversion of multicarriers in semimetal bismuth

Transport and spin conversion of multicarriers in semimetal bismuth

On the anomalous low-resistance state and exceptional Hall component in hard-magnetic Weyl nanoflakes

Boosting the surface conduction in a topological insulator

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