Precise growth of high uniformity vertical cavity devices using tunable dynamic optical reflectometry

Dijk, Frédéric van; Bardinal, Véronique; Fontaine, C.; Bedel-Pereira, Eléna; Muñoz‐Yagüe, A.

doi:10.1016/s0022-0248(98)01514-0

Cited by 7 publications

(1 citation statement)

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“…However, the standard thicknesses used in the semiconductor industry are larger, varying from 279 ± 25 µm for 50 mm Si wafers to 775 ± 20 µm for 300 mm Si wafers (SEMI Standard), highlighting the need for an even more sensitive curvature measurement tool. Moreover, when growing a layer of a material which refractive index is different from the underlayer’s, oscillations in the reflectivity of the film occur 26 , which may fall down, for a given wavelength, corresponding to destructive interferences 26 , 27 . If one uses a monochromatic source to measure the reflectivity, as involved for laser deflectometry-based techniques, the detector might lose the reflected light when reflectivity is low, and the system will be blind at this stage.…”

Section: Introductionmentioning

confidence: 99%

Magnification inferred curvature for real-time curvature monitoring

Arnoult

Colin

2021

Sci Rep

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The in situ and real-time measurement of curvature changes of optically reflecting surfaces is a key element to better control bottom-up fabrication processes in the semiconductor industry, but also to follow or adjust mirror deformations during fabrication and use for space or optics industries. Despite progresses made in the last two decades thanks to laser deflectometry-based techniques, the community lacks an instrument, easy to use, robust to tough environments and easily compatible with a large range of fabrication processes. We describe here a new method, called magnification inferred curvature (MIC), based on the determination of the magnification factor of the virtual image size of a known object created by a reflecting curved surface (the substrate) acting as a spherical mirror. The optical formalism, design, and proof of concept are presented. The precision, accuracy, and advantages of the MIC method are illustrated from selected examples taken from real-time growth monitoring and compared with state-of-the-art laser deflectometry-based instruments.

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Section: Introductionmentioning

confidence: 99%