Precise-tuning the In content to achieve high fill factor in hybrid buffer structured Cu 2 ZnSn(S, Se) 4 solar cells

Pei, Yingli; Guo, Jing; Kou, Dongxing; Zhou, Wenhui; Zhou, Zhengji; Tian, Qingwen; Meng, Yin‐Shan

doi:10.1016/j.solener.2017.03.082

Cited by 20 publications

(9 citation statements)

References 42 publications

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“…Under such conditions, the concentrations of self-compensated defect clusters [V Cu + Zn Cu ] and [Zn Sn + 2Zn Cu ] are expected to be high 26 . The observed increase in compensation in the absorbers with buffer layers (albeit slight in the case of In 2 S 3 ) could be accounted for by the formation of additional antisite defects such as Cd Cu and In Sn promoted by buffer deposition conditions 29,[58][59][60][61][62][63] . Due to the valencies of Cd and In atoms, antisites Cd Cu and In Sn form donor and acceptor defects, respectively.…”

Section: B Photoluminescence Measurementsmentioning

confidence: 98%

“…The increase in doping density in the In 2 S 3 -based device should have an associated V oc improvement of 61 mV. As V oc can be detrimentally affected by high shunt conductance G sh 62,73 , this anomaly can be explained in terms of increased G sh compared to the CdSbased device (G sh (In 2 S 3 ) = 39.3 mS/cm 2 , G sh (CdS) = 9.4 mS/cm 2 ). Similar carrier concentrations were observed in CZTSSe devices with In 2 S 3 buffer layers and CZTSSe absorbers intentionally doped with In 30,62,74 .…”

Section: Electrical Device Characterisationmentioning

confidence: 99%

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Defect limitations in Cu2ZnSn(S, Se)4 solar cells utilizing an In2S3 buffer layer

Campbell

Gibbon

et al. 2020

Journal of Applied Physics

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Alternative n-type buffer layer such as In 2 S 3 have been proposed as Cd-free alternative in kesterite Cu 2 ZnSn(S,Se) 4 (CZTSSe) solar cells. In this study, optical and electronic characterisation techniques together with device analysis and simulation were used to assess nanoparticle-based CZTSSe absorbers and solar cells with CdS and In 2 S 3 buffers. Photoluminescence spectroscopy indicated CZTSSe absorbers with In 2 S 3 buffer had a lower density of detrimental non-radiative defects and a higher concentration of copper vacancies V Cu + , responsible for p-type conductivity in CZTSSe, in comparison to the absorber with CdS buffer. Capacitance-voltage (C-V) measurements revealed the In 2 S 3 buffer-based CZTSSe devices had a three times higher apparent doping density and a consequently narrower space charge region than devices with a CdS layer. This resulted in poorer collection of photo-generated charge carriers in the near-IR region despite a more favourable band alignment as determined by X-ray photoelectron and inverse photoelectron spectroscopy. The presence of interfacial defect states in In 2 S 3 devices as determined by C-V and biased quantum efficiency measurements are also responsible for the loss in open-circuit voltage compared with reference devices with CdS.

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Section: B Photoluminescence Measurementsmentioning

confidence: 98%

Section: Electrical Device Characterisationmentioning

confidence: 99%

Defect limitations in Cu2ZnSn(S, Se)4 solar cells utilizing an In2S3 buffer layer

Campbell

Gibbon

et al. 2020

Journal of Applied Physics

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“…[27] The optimization of device performance can be attributed to the proper concentration of Al cation doping in the CdS buffer layer, which not only alleviated the recombination loss of photo-generated carriers but also improved the carrier transport efficiency. The integrated J SC values were calculated from EQE data according to the following equation: [28] SC…”

Section: Resultsmentioning

confidence: 99%

“…[ 27 ] The optimization of device performance can be attributed to the proper concentration of Al cation doping in the CdS buffer layer, which not only alleviated the recombination loss of photo‐generated carriers but also improved the carrier transport efficiency. The integrated J SC values were calculated from EQE data according to the following equation: [ 28 ]

\begin{array}{*{20}{c}}{{J_{{\rm{SC}}}} = \smallint F\;\left( \lambda \right)EQE\left( \lambda \right)d\lambda }\end{array}

where F(λ) is the photon flux and EQE(λ) is the measured EQE density. The integrated J SC values for A1, A3, and A0 devices were 21.61, 25.33, and 21.10 mA cm −2 , respectively.…”

Section: Resultsmentioning

confidence: 99%

Carrier Transport Enhancement Mechanism in Highly Efficient Antimony Selenide Thin‐Film Solar Cell

Luo

Chen

et al. 2023

Adv Funct Materials

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Exhibiting outstanding optoelectronic properties, antimony selenide (Sb 2 Se 3 ) has attracted considerable interest and has been developed as a light absorber layer for thin-film solar cells over the decade. However, current state-of-theart Sb 2 Se 3 devices suffer from unsatisfactory "cliff-like" band alignment and severe interface recombination loss, which deteriorates device performance. In this study, the heterojunction interface of an Sb 2 Se 3 solar cell is improved by introducing effective aluminum (Al 3+ ) cation into the CdS buffer layer. Then, the energy band alignment of Sb 2 Se 3 /CdS:Al heterojunction is modified from a "cliff-like" structure to a "spike-like" structure. Finally, heterojunction interface engineering suppresses recombination losses and strengthens carrier transport, resulting in a high efficiency of 8.41% for the substrate-structured Sb 2 Se 3 solar cell. This study proposes a facile strategy for interfacial treatment and elucidates the related carrier transport enhancement mechanism, paving a bright avenue to overcome the efficiency bottleneck of Sb 2 Se 3 thin-film solar cells.

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“…The photovoltaics (PV) module is currently being researched to increase electrical output [1]. In terms of methods for improving electrical output, there are studies on increasing the efficiency of c-Si solar cells and reducing the series resistance of solar cells and PV modules [2][3][4].…”

Section: Introductionmentioning

confidence: 99%

Analytical Study of the Electrical Output Characteristics of c-Si Solar Cells by Cut and Shading Phenomena

et al. 2018

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Cut solar cells have received considerable attention recently as they can reduce electrical output degradation when the c-Si solar cells (crystalline-silicon solar cells) are shaded. Cut c-Si solar cells have a lower short-circuit current than normal solar cells and the decrease in short-circuit currents is similar to the shading effect of c-Si solar cells. However, the results of this study’s experiment show that the shadow effect of a c-Si solar cell reduces the V o c (open circuit voltage) in the c-Si solar cell but the V o c does not change when the c-Si solar cell is cut because the amount of incident light does not change. In this paper, the limitations of the electrical power analysis of the cut solar cells were identified when only photo current was considered and the analysis of the electric output of the cut c-Si solar cells was interpreted with a method different from that used in previous analyses. Electrical output was measured when the shaded and cut rates of c-Si solar cells were increased from 0% to 25, 50 and 75%, and a new theoretical model was compared with the experimental results using MATLAB.

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Precise-tuning the In content to achieve high fill factor in hybrid buffer structured Cu 2 ZnSn(S, Se) 4 solar cells

Cited by 20 publications

References 42 publications

Defect limitations in Cu2ZnSn(S, Se)4 solar cells utilizing an In2S3 buffer layer

Defect limitations in Cu2ZnSn(S, Se)4 solar cells utilizing an In2S3 buffer layer

Carrier Transport Enhancement Mechanism in Highly Efficient Antimony Selenide Thin‐Film Solar Cell

Analytical Study of the Electrical Output Characteristics of c-Si Solar Cells by Cut and Shading Phenomena

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