Precursor Engineering for Solution Method-Grown Spectroscopy-Grade CsPbBr₃ Crystals with High Energy Resolution

Abstract

A CsPbBr 3 single crystal exhibits great potentials in X-ray/gamma-ray spectroscopy and imaging. Here, an inverse temperature crystallization (ITC) method with modified precursor composition is proposed to prepare CsPbBr 3 single crystals. The introduction of adduct PbBr 2 •2DMSO, synthesized by the antisolvent vaporassisted crystallization method, in the precursor solution gives rise to superior crystallization with a lower impurity concentration and higher resistivity of 6.37 × 10 9 Ω•cm, as well as a higher hole mobility (50.7 cm 2 •V −1 •s −1 ). Furthermore, a low dark current of 2.3 nA is obtained at a bias of −100 V based on an as-grown crystal with a thickness of 1 mm, according to the asymmetric Au/CsPbBr 3 /Sn structure. The resulting asymmetric planar detectors achieve the high peak-to-valley ratio pulse height spectra with an energy resolution of 7.66%, illuminated by an uncollimated 241 Am@5.5 MeV α particle. Simultaneously, an energy resolution of 13.5% is realized when irradiated by a 59.5 keV 241 Am γ-ray source at room temperature. The thermally stimulated current (TSC) spectra indicate that the density of deep energy-level trap is significantly reduced in the CsPbBr 3 crystals grown by PbBr 2 •2DMSO-modified precursor solution, which is consistent with the high performance in radiation detection.

Crystal growth, transport behavior and X-ray detection of non-perovskite-phase NH4Pb2Br5

“…The promising candidates, such as MAPbI 3 , 1 MAPbBr 3 , 2 CsPbBr 3 , 3 and CsPbI 3 , 4 demonstrate high X-ray sensitivity and low detection limits for X-rays. Notably, high spectral resolution of alpha particles and gamma rays at room temperature was realized in CsPbBr 3 , 5–7 CsPbCl 3 , 8 MAPbI 3 , 9 and FAPbBr 3 10 and (DBA) 2 CsPb 2 Br 7 11 detectors.…”

Nucleation-controlled growth of high-quality CsPbBr3 single crystals for ultrasensitive weak-light photodetectors

“…[9][10][11][12][13] To date, the vertical Bridgman method and solution growth methods including inverse temperature crystallization (ITC) and anti-solvent vapor-assisted crystallization (AVC) have been the two most commonly used growth methods for CsPbBr 3 SCs. 11,[14][15][16][17][18][19] In 2013, the vertical Bridgman method was first adopted to grow CsPbBr 3 SCs, which exhibited high resistivity and a significant photoconductivity response. 14 Through continuous efforts made for optimizing the vertical Bridgman method, the crystal quality and photoelectronic properties of the acquired CsPbBr 3 SCs improved dramatically.…”

Improved Crystallization Quality of FAPbBr3 Single Crystals by a Seeded Solution Method

“…Feng et al 20 used choline bromide additive-assisted ITC to grow CsPbBr 3 single crystals, which reduced the density of trap states by over 1 order of magnitude. Wang et al 21 employed PbBr 2 •2DMSO to alter the crystal nucleation process, and detector-grade CsPbBr 3 SCs with lower grown-in defects were obtained. Zhang et al 22 invented a nucleation-controlled method to reduce nucleation and obtain large-size Cs 3 Bi 2 I 9 SCs.…”