Precursors for the Formation of Tin(IV) Oxide and Related Materials

Abstract

Molecular precursors for the formation of tin oxide and related materials by chemical vapour deposition or sol-gel routes are reviewed.

Aerosol‐Assisted CVD of SnO2 Thin Films for Gas‐Sensor Applications

“…[11] Various precursors have been reported to be used for SnO 2 synthesis, and the unanimous view is that the precursor nature and its interaction with solvent determine the particle shape and size -the most important parameters for gas-sensor applications. [12] To the best of our knowledge, studies reporting AACVD synthesis of SnO 2 materials for gas sensors are scarce in the literature, only a few being found. In one report, [13] the authors deposited pure and Cu-doped SnO 2 thin films at 400 8C, using a SnCl 2 Á 2H 2 O precursor dissolved in ethanol.…”

Synthesis and Structure of Novel Tin Complexes Containing Aminoalkoxide Ligands

“…Various types of precursors have been applied in the deposition of tin oxide and tin sulfide films, including SnCl 4 , Sn(OC(CH 3 ) 3 ) 4 , Sn(NO 3 ) 4 , dimethyltin dichloride ((CH 3 ) 2 SnCl 2 , DMTC), monobutyltin trichloride (n–C 4 H 9 SnCl 3 , MBTC), Me 4 Sn, Et 4 Sn, Me 2 Sn(NMe) 2 , Bu 2 Sn(O 2 CMe) 2 , Sn(O 2 CMe) 2 , and Sn(NMe 2 ) 2 , Sn(acac) 2 (acac=acetylacetonate), Sn n Bu 2 (CH 3 COO) 2 , Sn(tbba) (tbba= N 2 , N 3 ‐di‐tert‐butyl‐butan‐2,3‐diamine), and more. It is well known that when depositing precursors including various types of tin based materials, methods such as solution based CVD and aerosol‐assisted (AA)CVD along with atomic layer deposition (ALD) are arising to overcome the barriors such as having a low vapor pressure of decomposition of the ligands used in precursor during deposition ,…”

Application of nBu2Sn(acac)2 for the deposition of nanocrystallite SnO2 films: Nucleation, growth and physical properties

“…Naturally, the volatility and decomposition mechanism of a precursor largely determine the final quality and physical properties of the films [21]. Various types of precursors have been applied in the deposition of SnO 2 films, including SnCl 4 , Sn(NO 3 ) 4 , dimethyltindichloride ((CH 3 ) 2 SnCl 2 , DMTC), monobutyltintrichloride (n-C 4 H 9 SnCl 3 , MBTC), Me 4 Sn, Et 4 Sn, Me 2 Sn(NMe) 2 , Bu 2 Sn(O 2 CMe) 2 , Sn(O 2 CMe) 2 , and Sn(NMe) 2 [22]. Inorganic precursors generally need high deposition temperature and tend to result in halide contaminations, while organometallic precursors are air/moisture-sensitive, toxic and/or quite expensive [21,22].…”

“…Various types of precursors have been applied in the deposition of SnO 2 films, including SnCl 4 , Sn(NO 3 ) 4 , dimethyltindichloride ((CH 3 ) 2 SnCl 2 , DMTC), monobutyltintrichloride (n-C 4 H 9 SnCl 3 , MBTC), Me 4 Sn, Et 4 Sn, Me 2 Sn(NMe) 2 , Bu 2 Sn(O 2 CMe) 2 , Sn(O 2 CMe) 2 , and Sn(NMe) 2 [22]. Inorganic precursors generally need high deposition temperature and tend to result in halide contaminations, while organometallic precursors are air/moisture-sensitive, toxic and/or quite expensive [21,22]. Therefore, exploring the suitability of volatile and liquid metal-organic potential precursors is very important for the development of SnO 2 -based films.…”