Predicted small-signal gain of the HBT distributed amplifier

Botterill, I.A.; Aitchison, C.S.

doi:10.1109/mwsym.1994.335422

Cited by 4 publications

(17 citation statements)

References 6 publications

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“…These results were then compared with the simulated performance of the amplifiers designed using the HBT complete model. As further verification, the results obtained inserting the HBT unilateral model in the analytical formulation in [3] are also presented.…”

Section: (C)mentioning

confidence: 86%

“…To date, an analytical expression to compute the small-signal gain of HBT distributed amplifier based on a unilateral model, was given in [3].…”

Section: Introductionmentioning

confidence: 99%

“…In miniaturized high-speed circuits, the lines are placed in close proximity and coupling is not negligible. The characteristic admittance matrix of a lossless transmission-line system composed of n-signal conductors and a reference conductor is Y = L 01 (LC) 1=2 (1) and is known to be invertible [2], [3]. The symbols C, L denote n2n square matrices of per unit length capacitance and inductance, respectively.…”

Section: Introductionmentioning

confidence: 99%

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An HBT unilateral model to design distributed amplifiers

Paoloni

D'Agostino

1999

IEEE Trans. Microwave Theory Techn.

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A novel heterojunction bipolar transistor (HBT) unilateral model oriented to a fast prediction of the performance of HBT monolithicmicrowave integrated-circuit distributed amplifiers is proposed. The HBT unilateral model includes, by simple expressions, the effects caused by the HBT parasitics. A graphical design procedure for HBT distributed amplifiers is also proposed. This method is based on a set of generalized charts and represents a simple and fast design tool for designers. Comparisons between the performance of specially designed HBT distributed amplifiers and the results obtained using the HBT unilateral model demonstrate the validity of the proposed approach.

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Section: (C)mentioning

confidence: 86%

“…To date, an analytical expression to compute the small-signal gain of HBT distributed amplifier based on a unilateral model, was given in [3].…”

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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An HBT unilateral model to design distributed amplifiers

Paoloni

D'Agostino

1999

IEEE Trans. Microwave Theory Techn.

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“…A large amount of work has been published which predicts the theoretical small-signal gain of the MESFET DA [3,4], but there has been little corresponding work published specifically for the HBT DA [5]. Since there is a fundamental difference in structure between the MESFET and the HBT, most previously published analysis is invalid in the case of the HBT DA [5].…”

Section: Introductionmentioning

confidence: 99%

“…The simplified equivalent device model used to represent the HBT has been slightly modified from that chosen as a basis for analysis in previous work [5] in order to improve the predictive accuracy of the final gain expression, particularly at high frequencies.…”

Section: Introductionmentioning

confidence: 99%

Predicted Small-Signal Gain of the HBT Distributed Amplifier with Practical Terminations

Botterill¹,

Aitchison²

1994

24th European Microwave Conference, 1994

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Recent interest in the heterojunction bipolar transistor (HBT) distributed amplifier (DA) has led to a need for an analytical expression predicting its small-signal gain. Previously published DA analysis has almost always assumed ideal characteristic impedance terminations as a basis. This assumption introduces inaccuracy into the prediction of the performance of a practically terminated DA, which has been found to be more significant in the case of the HBT DA than in the case of the MESFET DA. This paper describes an analytical expression which has been developed to predict the small-signal gain of an arbitrarily terminated DA. By removing the restriction of characteristic impedance terminations from the analysis, better agreement with the simulated performance of an HBT DA with practical terminations has been obtained. Emphasis has also been placed on basing theoretical analysis on a simplified equivalent HBT model which is, as far as possible, physically meaningful.

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A HBT‐based quasi‐circulator with wideband equalization technique

Mung

Chan

Man

2011

Micro & Optical Tech Letters

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An innovative wideband equalization technique for use in a quasi‐circulator is presented. The technique utilizes both gain and phase equalization, which provides wideband frequency operation with good return loss and isolation between ports. The circulator is realized by configuring three heterojunction bipolar transistors together with an equalizing phase shifter. Both theoretical analyses and experimental validations are performed. Experimental results show that it can operate over the frequency range 0.8–2.2 GHz. © 2011 Wiley Periodicals, Inc. Microwave Opt Technol Lett 53:766–768, 2011; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.25820

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Predicted small-signal gain of the HBT distributed amplifier

Cited by 4 publications

References 6 publications

An HBT unilateral model to design distributed amplifiers

An HBT unilateral model to design distributed amplifiers

Predicted Small-Signal Gain of the HBT Distributed Amplifier with Practical Terminations

A HBT‐based quasi‐circulator with wideband equalization technique

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