The optical and electrical properties of MnTe films were investigated to ascertain the feasibility of their use in solar cell applications. Three ¡-MnTe thin films with different composition, i.e., Mn-47.9 at% Te, Mn-49.2 at% Te, and Mn-50.4 at% Te, were prepared using RF magnetron sputtering. All the films demonstrated a high light absorption coefficient (0.2 © 10 5 0.8 © 10 6 cm ¹1) and an optimal indirect band gap (1.37 1.52 eV) for solar cell applications. Furthermore, all of them exhibited p-type conductivity, with the Mn-47.9 at% Te film demonstrating three to four times higher carrier mobility (5.2 cm 2 •V ¹1 •s ¹1) than the Mn-50.4 at% Te film (1.6 cm 2 •V ¹1 •s ¹1).