Predicting surface modification of InAs nanowires on laser irradiation using transient thermal simulation and time evolution of Raman spectra

Gupta, Vandna K.; Ingale, Alka; Jain, Vikas; Aggarwal, R.; Pal, Sujay

doi:10.1016/j.jallcom.2017.11.247

Cited by 5 publications

(19 citation statements)

References 27 publications

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“…In previous work [8], we established a correlation between simulated transient temperatures at the surface of an InAs NW on laser irradiation with the time evolution of Raman spectra. All NWs studied were oriented similarly for Raman data presented in earlier work.…”

Section: Resultsmentioning

confidence: 99%

“…For InAs NWs of diameter ∼200-500 nm and length ∼3-10 μm [20], Raman measurements were performed using a Trivista 557 with CCD detector (S & I spectroscopy and imaging) with coverage per pixel ∼0.7 cm −1 (figures 3-6) with spatial resolution ∼0.66 μm. Temperature simulations are performed with the finite element method, by using ANSYS software [8].…”

Section: Methodsmentioning

confidence: 99%

“…of an isolated NW. In our earlier work [8], we have studied the correlation between simulated transient temperature and the time evolution of Raman spectra on InAs NWs, and established that a simulated temperature can be used to predict/control the required surface modification. Conventional ways of getting Stokes-anti Stokes measurements for the calculation of the temperature at the laser irradiated InAs NW surface does not give the correct temperature, due to resonance enhancement of InAs phonons.…”

Section: Introductionmentioning

confidence: 99%

“…Conventional ways of getting Stokes-anti Stokes measurements for the calculation of the temperature at the laser irradiated InAs NW surface does not give the correct temperature, due to resonance enhancement of InAs phonons. Therefore, the simulation of temperature is important for estimating temperature under laser irradiation of InAs NW [8]. All NWs studied in the above mentioned work were oriented similarly in the plane.…”

Section: Introductionmentioning

confidence: 99%

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Understanding the effect of nanowire orientation on time evolution of Raman spectra from laser irradiated InAs nanowire surface

et al. 2018

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We investigate differences observed in the time evolution of Raman spectra for differently oriented (in plane) InAs nanowires (NWs), using polarized Raman spectroscopy. Specially designed polarized Raman spectroscopy experiments elucidate that laser irradiation leads to the formation of an oriented crystalline oxide film on the InAs NW surface. Both the formation of oriented crystalline oxides and Raman selection rules leading to the presence/absence of oxide peaks in the unpolarized Raman spectra are uncommon occurrences and can lead to incorrect interpretations of the oxidation process, if not looked into carefully. Further, the specially designed heating and cooling experiments for a mixed phase (wurtzite + zinc blende) InAs NW revealed the formation of specific allotropes of elemental As, i.e. gray-As (rhombohedral) and black-As (orthorhombic: metastable) at low (700-950 K) and high simulated temperatures (1000-1300 K) on the InAs NW surface, respectively. Both have high electrical conductivity due to a layered structure and control over the growth of only a few layers using laser irradiation envisages properties similar to graphene. This kind of surface of InAs NWs has the potential for novel device applications, where a semiconductor-insulator-metal heterostructure is required.

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Section: Resultsmentioning

confidence: 99%

Section: Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Understanding the effect of nanowire orientation on time evolution of Raman spectra from laser irradiated InAs nanowire surface

et al. 2018

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“…In particular, thermal oxidation due to laser heating is an example of photodegradation, in which the oxidation process is accelerated by virtue of the laser incidence in an oxidizing atmosphere. 14–16 As a consequence of this process, degradation of some features of the sample may occur, such as a change in the chemical composition due to native oxide formation; 19 morphological modifications 16 as in the case of surface erosion caused by loss of sample constituents; 14 or even suppression of optical emission efficiency. 15 Thermal oxidation in bulk GaAs has been extensively reported in the literature, 15,19–32 and all authors agree on the formation of gallium oxides.…”

Section: Introductionmentioning

confidence: 99%

Photodegradation of Si-doped GaAs nanowire

et al. 2019

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Researching optical effects in nanowires may require a high pump intensity which under ambient conditions can degrade nanowires due to thermal oxidation. In this work we investigated the photodegradation of a single Si-doped GaAs nanowire by laser heating in air. To understand the changes that occurred on the nanowire we carried out Raman spectroscopy, scanning electron microscopy, energy dispersive X-ray spectroscopy, and photoluminescence spectroscopy in laser damaged regions as well as in non-affected ones. From Raman Stokes and anti-Stokes measurements we estimated the local temperature that the oxidation process of the nanowire (NW) surface starts at as 661 K, resulting in two new Raman modes at 200 cm À1 and 259 cm À1 . Scanning electron microscopy and energy dispersive X-ray spectroscopy measurements showed a significant loss of arsenic in the oxidized regions, but no erosion of the nanowire. Micro-photoluminescence measurements showed the near-band-edge emission of GaAs along the nanowire, as well as a new emission band at 755 nm corresponding to polycrystalline b-Ga 2 O 3 formation. Our results also indicate that neither amorphous As nor crystalline As were deposited on the surface of the nanowire. Combining different experimental techniques, this study showed the formation of polycrystalline b-Ga 2 O 3 by oxidation of the nanowire surface and the limits for performing spectroscopic investigations on individual GaAs NWs under ambient air conditions.

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Novel use of selectivity of resonance Raman spectroscopy to study polytypism and mixed to pure phase conversion in individual InAs NWs on laser irradiation

Gupta

Ingale

Aggarwal

2022

Applied Surface Science

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Predicting surface modification of InAs nanowires on laser irradiation using transient thermal simulation and time evolution of Raman spectra

Cited by 5 publications

References 27 publications

Understanding the effect of nanowire orientation on time evolution of Raman spectra from laser irradiated InAs nanowire surface

Understanding the effect of nanowire orientation on time evolution of Raman spectra from laser irradiated InAs nanowire surface

Photodegradation of Si-doped GaAs nanowire

Novel use of selectivity of resonance Raman spectroscopy to study polytypism and mixed to pure phase conversion in individual InAs NWs on laser irradiation

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