1978
DOI: 10.1149/1.2131419
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Prediction of Flatband Potentials at Semiconductor‐Electrolyte Interfaces from Atomic Electronegativities

Abstract: The electron affinities of several metal oxide semiconductors that have been used as anodes in photoelectrochemical cells are calculated using the atomic electronegativities of the constituent atoms. These electron affinities are quantitatively related to the measured flatband potentials by considering the effects of specific adsorption of potential-determining ions (for metal oxides used in photoelectrolysis, these are usually OH-and H+). Methods are discussed for determining the pH at which net adsorbed surf… Show more

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Cited by 1,171 publications
(611 citation statements)
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“…36 The relevant E c and E v levels, which were calculated by the Nernst relation, under neutral conditions are shown in Table S3. 37 In general, ROS can be generated using the incident photon energy and interfacial electron (e cb •− generation. 39 As an N-type semiconductor, 40 nFe 2 O 3 may have an upward-bending conduction band owing to the accumulation of positive charge within the space charge region of the electrostatic double layer.…”
Section: ■ Results and Discussionmentioning
confidence: 99%
“…36 The relevant E c and E v levels, which were calculated by the Nernst relation, under neutral conditions are shown in Table S3. 37 In general, ROS can be generated using the incident photon energy and interfacial electron (e cb •− generation. 39 As an N-type semiconductor, 40 nFe 2 O 3 may have an upward-bending conduction band owing to the accumulation of positive charge within the space charge region of the electrostatic double layer.…”
Section: ■ Results and Discussionmentioning
confidence: 99%
“…Similarly, adsorption of other ions from solution or the intentional modification of the surface with adsorbants with a large dipole moment [114] will shift the photocatalyst potentials relative to those of the solution red-ox reactions and can be used to engineer the potentials of a photocatalyst beyond what is possible by changing the bulk chemical composition alone. Please see work by Butler et al [115] and Stevanovic et al [89] on how this influences the comparison between computational prediction and experimental measurement.…”
Section: Thermodynamic Driving Forcementioning
confidence: 99%
“…As reviewed by Xu and Schoonen (24), the Fermi level and absolute energy positions of conduction and valence bands of pristine semiconductor minerals can be closely estimated using the method proposed by Bulter and Ginley (25). According to this method, the Fermi level energy of ferrihydrite can be calculated from the geometric mean of the electronegativities of its constituent atoms.…”
Section: Evaluation Of a Mechanism Involving Electron Transfer Reactimentioning
confidence: 99%