Prediction of lateral barrier height in identically prepared Ni/n-type GaAs Schottky barrier diodes

The analysis of lateral distribution of barrier height in identically prepared Co/n-Si Schottky diodes

“…Therefore, these diodes are patchy [29,30,38]. The larger values of ideality factors are attributed to secondary mechanisms at the interface [1,2,6,26,27,31,38]. For example, interface defects may lead to a lateral inhomogenous distribution of barrier heights at the interface which results in larger ideality factors, and the charge transport across the interface only is no longer due to thermionic emission.…”

“…Our data clearly show that the diodes have ideality factors that are considerably larger than the value determined by the imageforce effect only. Therefore, these diodes are patchy [29,30,38]. The larger values of ideality factors are attributed to secondary mechanisms at the interface [1,2,6,26,27,31,38].…”

“…As can be seen, the experimental effective BHs obtained from the C-V characteristics can differ from diode to diode. Therefore, as mentioned above, their averages should be taken [29][30][31][32][33]38]. Fig.…”

Analysis of barrier height inhomogeneity in Au/n-GaAs Schottky barrier diodes by Tung model

“…Forment et al [13] and Leroy et al [14] reported the average SBHs value of 0.883 ± 0.018 and 0.819 ± 0.01 eV for Au/n-GaAs, respectively. Dogan et al [15] have obtained the homogeneous SBH value of 0.862 eV for Ni/n-GaAs. The obtained barrier height of the studied diode is lower than that of those diodes.…”

“…The current through a Schottky barrier diode according to thermionic emission (TE) theory is given by the following relation [15,16]: where, V is the applied voltage, n is the ideality factor and I 0 is the reverse saturation current given by:…”