Microelectronics research is strongly driven by the demand for smaller components of micro or even nanocapacitors, which are the basis of many memory devices. The miniaturization depends critically on achieving exotic materials of high dielectric constants and barium strontium titanate (Ba, SrTiO 3 ), yttrium oxide (Y 3 O 2 ), zirconium oxide (ZrO 2 ), niobium pentoxide (Nb 2 O 5 ), tantalum pentoxide (Ta 2 O 5 ), and so on have been widely investigated. Compared with the others, Ta 2 O 5 possesses a higher degree of compatibility with current microelectronic fabrication procedures and is identified as a more promising dielectric material for various applications, 1 such as used in solar-cell technology, photo-catalysis, or used as a suitable alternative to SiO 2 -based nanoscale dynamic random access memories for next generation of memory devices. 2,3 Previous experiments show that there exist multiple phases of Ta 2 O 5 in the realistic materials prepared under different conditions, such as temperature, pressure, and post-treatment. According to the growth conditions, the crystallographic structures can be classified into three groups. In a temperature range of 743-1633 K, the lowtemperature phase (L-Ta 2 O 5 ) may be δ, 4,5 β, 6 L SR 7,8 or L G , 9 while for the temperatures above 1633 K, the hightemperature phase (H-Ta 2 O 5 ) including orthorhombic, tetragonal, and monoclinic lattice are observed, 10,11 and at high pressures (>0.2 Kbar), B-and Z-Ta 2 O 5 phase emerges. 12,13 Since different lattice structure possesses different dielectric properties, it is important to know